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Surface Modification of Cu(In,Ga)Se2 Thin Films During Aqueous Oxidation Etch

Published online by Cambridge University Press:  10 February 2011

B. Canava ,
J. F. Guillemoles ,
D. Lincot ,
J. Vedel ,
H. Ardelean  and
F. Malengreau
B. Canava
Affiliation:
Laboratoire d'Electrochimie et de Chimie Analytique (associé au CNRS)
J. F. Guillemoles
Affiliation:
Laboratoire d'Electrochimie et de Chimie Analytique (associé au CNRS)
D. Lincot
Affiliation:
Laboratoire d'Electrochimie et de Chimie Analytique (associé au CNRS)
J. Vedel
Affiliation:
Laboratoire d'Electrochimie et de Chimie Analytique (associé au CNRS)
H. Ardelean
Affiliation:
Laboratoire de Physico-Chimie des Surfaces (associé au CNRS)Ecole Nationale Supérieure de Chimie de Paris11 rue P&M Curie, 75005 Paris, France. guillemo@ext.jussieu.fr
F. Malengreau
Affiliation:
Laboratoire de Physico-Chimie des Surfaces (associé au CNRS)Ecole Nationale Supérieure de Chimie de Paris11 rue P&M Curie, 75005 Paris, France. guillemo@ext.jussieu.fr
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Abstract

The control of the barrier height at the Cu(In,Ga)Se2(CIGS)/CdS interface, via the chemical state of the CIGS surface, is a key to improve solar cell performances. In this paper chemical modifications have been achieved by the electrochemical method, by varying both the pH of the solution and the applied potential. It is shown that the potential for electrochemical oxidation depends on the pH, in good agreement with the thermodynamic predictions. The resulting surface composition of CIGS, analyzed by XPS, also depends on the pH. Contact Potential Differences (CPD) and Surface Photovoltage (SPV) measurements show that the electronic properties of the CIGS surface are modified. The important result is that the oxidation leads to the formation of permanent positive surface charges, which increase the band bending up to 0.20 V in a direction favorable for the solar cell performances.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 485: Symposium G – Thin Film Structures for Photovoltaics , 1997 , 133
Copyright
Copyright © Materials Research Society 1998

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References

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