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Surface-Topography Simulations of Ionized Sputter Metal Deposition

Published online by Cambridge University Press:  15 February 2011

S. Hamaguchi  and
S.M. Rossnagel
S. Hamaguchi
Affiliation:
IBM Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598.
S.M. Rossnagel
Affiliation:
IBM Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598.
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Abstract

Numerical simulations are used to predict microscopic topography of deposited metal films in ionized magnetron sputter deposition experiments. The simulation takes into account ionized and neutral fluxes as deposition material sources and re–sputtering and re–deposition of the deposited material due to the ion bombardment. The shock-tracking algorithm is used to advance the moving surface boundary. Applications of this deposition technique include lining and filling of trenches, vias and dual damascene.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 389: Symposium R – Modedling and Simulation of Thin-Film Processing , 1995 , 113
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCES

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