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Surfactant Mediated Slurry Formulations for Ge CMP Applications

Published online by Cambridge University Press:  13 August 2013

G. Bahar Basim
Affiliation:
Ozyegin University, Department of Mechanical Engineering, Nisantepe Mevki, Orman Sokak, No 13, Alemdag, Cekmekoy, 34794,Istanbul, Turkey
Ayse Karagoz
Affiliation:
Ozyegin University, Department of Mechanical Engineering, Nisantepe Mevki, Orman Sokak, No 13, Alemdag, Cekmekoy, 34794,Istanbul, Turkey
Long Chen
Affiliation:
Division of Physical Sciences and Engineering, King Abdullah University of Science and Technology, Thuwal, 23955, Saudi Arabia.
Ivan Vakarelski
Affiliation:
Division of Physical Sciences and Engineering, King Abdullah University of Science and Technology, Thuwal, 23955, Saudi Arabia.
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Abstract

In this study, slurry formulations in the presence of self-assembled surfactant structures were investigated for Ge/SiO2 CMP applications in the absence and presence of oxidizers. Both anionic (sodium dodecyl sulfate-SDS) and cationic (cetyl trimethyl ammonium bromide-C12TAB) micelles were used in the slurry formulations as a function of pH and oxidizer concentration. CMP performances of Ge and SiO2 wafers were evaluated in terms of material removal rates, selectivity and surface quality. The material removal rate responses were also assessed through AFM wear rate tests to obtain a faster response for preliminary analyses. The surfactant adsorption characteristics were studied through surface wettability responses of the Ge and SiO2 wafers through contact angle measurements. It was observed that the self-assembled surfactant structures can help obtain selectivity on the silica/germanium system at low concentrations of the oxidizer in the slurry.

Type
Articles
Copyright
Copyright © Materials Research Society 2013 

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References

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