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Surfactant-Mediated Growth of SiGe/Si Quantum-Well Structures Studied by Photoluminescence Technique and Secondary Ion Mass Spectrometry

Published online by Cambridge University Press:  21 February 2011

S. Nilsson ,
H. P. Zeindl ,
D. Krüger ,
J. Klatt  and
R. Kurps
S. Nilsson
Affiliation:
Institute of Semiconductor Physics, P.O. Box 409, 15204 Frankfurt/Oder, Germany
H. P. Zeindl
Affiliation:
Institute of Semiconductor Physics, P.O. Box 409, 15204 Frankfurt/Oder, Germany
D. Krüger
Affiliation:
Institute of Semiconductor Physics, P.O. Box 409, 15204 Frankfurt/Oder, Germany
J. Klatt
Affiliation:
Institute of Semiconductor Physics, P.O. Box 409, 15204 Frankfurt/Oder, Germany
R. Kurps
Affiliation:
Institute of Semiconductor Physics, P.O. Box 409, 15204 Frankfurt/Oder, Germany
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Abstract

In this investigation, surfactant-mediated growth of SiGe/Si single quantum-well structures is studied by photoluminescence and secondary ion mass spectrometry. The samples were grown by molecular-beam epitaxy and Sb was used as a surfactant. The photon energy of the SiGe-related near-band-edge photoluminescence was used to probe the action of Sb as a surfactant to promote two-dimensional growth and to reduce segregation of Ge during growth. First, the "growth-temperature window" at which Sb acts preferentially as a surfactant was determined. Then, at this optimized temperature of 700°C, the influence of different Sb coverages was investigated and it was found that 0.5 monolayer was a sufficient coverage to obtain full surfactant action. Ge concentration depth profiles obtained by secondary ion mass spectrometry confirmed the effect of surfactant-mediated growth and, in addition, the unintentional incorporation of the Sb surfactant during growth was determined quantitatively. In a final experiment the effect of deposition of Sb on either the lower or the upper heterointerface is addressed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 399: Symposium D – Evolution of Epitaxial Structure and Morphology , 1995 , 197
Copyright
Copyright © Materials Research Society 1996

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References

REFERENCES

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