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Switching Kinetics of Pulsed Laser Deposited Epitaxial PZT Films

Published online by Cambridge University Press:  15 February 2011

M. Yamazato ,
A. M. Grishin ,
Y. Yamagata ,
T. Ikegami  and
K. Ebihara
M. Yamazato
Affiliation:
Department of Electrical and Computer Engineering, Kumamoto University, Kumamoto, 860-8555, JAPAN, yamazato@eecs.kumamoto-u.ac.jp
A. M. Grishin
Affiliation:
Department of Electrical and Computer Engineering, Kumamoto University, Kumamoto, 860-8555, JAPAN Department of Condensed Matter Physics, Royal Institute of Technology, S-100 44, Stockholm, Sweden
Y. Yamagata
Affiliation:
Department of Electrical and Computer Engineering, Kumamoto University, Kumamoto, 860-8555, JAPAN
T. Ikegami
Affiliation:
Department of Electrical and Computer Engineering, Kumamoto University, Kumamoto, 860-8555, JAPAN
K. Ebihara
Affiliation:
Department of Electrical and Computer Engineering, Kumamoto University, Kumamoto, 860-8555, JAPAN
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Abstract

We have fabricated epitaxial PbZr0.52Ti0.48O3 (PZT, 40~1200 nm)/YBa2Cu3O7-x (YBCO, 400 nm) film ferroelectric/superconductor heterostructures on the single-crystal neodymium doped yttrium monoaluminate [YAlO3+1%Nd2O3] and MgO substrates by KrF pulsed laser deposition technique. The dielectric constant of 950 and loss tangent δ of 0.04 have been found to be frequency independent in the range 100 Hz to 100 kHz while electric resistivity ρ (150 kV/cm) is of 6×1011 Ω·cm, remnant polarization and coercive field are 32 μC/cm2 and 43 kV/cm, respectively. Fast ferroelectric switching kinetics with characteristic switching time around 50 ns has been observed. Universal electric field and temperature dependencies of switching time as well as film thickness dependence of coercive electric field have been observed and correspond to ferroelectric needle-like domain switching.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 526: Symposium Y – Advances in Laser Ablation of Materials , 1998 , 187
Copyright
Copyright © Materials Research Society 1998

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