Hostname: page-component-6bf8c574d5-h6jzd Total loading time: 0.001 Render date: 2025-02-22T16:11:27.075Z Has data issue: false hasContentIssue false
  • English
  • Français

Synchrotron X-Ray Topographic Study of Defects in High Quality, Flux Grown Ktiopo4 Single Crystals

Published online by Cambridge University Press:  15 February 2011

S. Wang ,
M. Dudley ,
L. K. Cheng  and
J. D. Bierlein
S. Wang
Affiliation:
Dept. of Materials Science and Engineering, SUNY at Stony Brook, NY 11794-2275.
M. Dudley
Affiliation:
Dept. of Materials Science and Engineering, SUNY at Stony Brook, NY 11794-2275.
L. K. Cheng
Affiliation:
E.I. du Pont de Nemours & Company, Inc., Experimental Station, Central R&D Dept., P.O. Box 80306, Wilmington, DE 19880-0306.
J. D. Bierlein
Affiliation:
E.I. du Pont de Nemours & Company, Inc., Experimental Station, Central R&D Dept., P.O. Box 80306, Wilmington, DE 19880-0306.
Get access

Abstract

Defect structures in large, high quality flux-grown KTP single crystals have been studied by using synchrotron white beam X-ray topography. Growth dislocations, inclusions, growth sector boundaries, growth bands and surface micro-scratches were imaged. A number of planar defects in the dislocation-free region are imaged and determined to be inversion twin lamellae (lamellar ferroelectric domains) which have never been previously reported in KTP crystals. These inversion twin lamellae were also studied by section topography. Detailed analysis of observed contrast revealed that the domain walls bounding the lamellae are faulted with a fault vector of ½[0±1±1]. This fault vector seems to be consistent with the atomic structure of KTP. A detailed analysis is presented and discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 307: Symposium L – Applications of Synchrotron Radiation Techniques to Materials Science , 1993 , 243
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Bierlein, J.D. and Vanherzeele, H., J. Opt. Soc. Am. B 6, 622 (1989).Google Scholar
2. van der Poel, C.J., Bierlein, J.D., Brown, J.B. and Colak, S., Appl. Phys. Lett. 57, 2074 (1990).Google Scholar
3. Tardjman, I., Masse, R. and Gritel, J.C., Z. Kristal. 139, 103 (1974).Google Scholar
4. Bierlein, J.D. and Amhed, F., Appi. Phys. Lett. 51, 1322 (1987).Google Scholar
5. Laurell, F., Roleofs, M.G., Bindloss, W., Hsiung, H., Suna, A. and Bierlein, J.D., J. Appl. Phys. 71, 4664 (1992).Google Scholar
6. Wang, S., Dudley, M., Cheng, L.K., Bierlein, J.D. and Bindloss, W., in Ferroelectric Thin Films III, edited by Myers, E.R., Tuttle, B.A., Desu, S.B., and Larsen, P.K. (Mater. Res. Soc. Symp. Proc. 310, Pittsburgh, PA, 1993).Google Scholar
7. Bolt, R.J., de Haas, H., Sebastian, M.T. and Klapper, H., J. Cryst. Growth 110, 587 (1991).Google Scholar
8. Halfpenny, P.J., O'Neill, L., Sherwood, J.N., Simpson, G.S., Yokotani, A., Miyamoto, A., Sasaki, T. and Nakai, S., J. Cryst. Growth 113, 722 (1991).Google Scholar
9. K Tanner, B., X-Ray Diffraction Topography (Pergamon,Oxford, 1976) p. 9 1.Google Scholar
10. Chikawa, J., J. Appl. Cryst. 1, 165 (1968).CrossRefGoogle Scholar
11. Klapper, H., Pro. Crystal Growth and Charact. 14, 367 (1987).CrossRefGoogle Scholar
12. Cheng, L.K., McCarron, E.M. III, Calabrese, J. and Bierlein, J.D., submitted to J. Cryst. Growth.Google Scholar