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Synthesis and Luminescent Properties of GaN and GaN-Mn Blue Nanocrystalline Thin-Film Phosphor for FED

Published online by Cambridge University Press:  17 March 2011

Vyacheslav D. Bondar ,
Thomas E. Felter ,
Charles E. Hunt ,
Igor Yo. Kucharsky  and
Andrei G. Chakhovskoi
Vyacheslav D. Bondar
Affiliation:
Lviv National University, Department of Physics, 50 Dragomanov Str., 79005, Lviv, Ukraine
Thomas E. Felter
Affiliation:
Lawrence Livermore National Laboratory, PO Box 808, L - 356, Livermore, CA, 94550
Charles E. Hunt
Affiliation:
University of California at Davis, Department of Electric and computer Engineering, Davis, CA, 95616
Igor Yo. Kucharsky
Affiliation:
Lviv National University, Department of Physics, 50 Dragomanov Str., 79005, Lviv, Ukraine
Andrei G. Chakhovskoi
Affiliation:
University of California at Davis, Department of Electric and computer Engineering, Davis, CA, 95616
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Abstract

The technologies of fabrication of thin film phosphors based on gallium nitride using rf-magnetron sputtering are developed and the structural properties of these films are studied. Luminescence and electron spin resonance (ESR) spectra of GaN and GaN-Mn thin films are obtained. A correlation between cathodo-luminescence intensity and conductivity of GaN films is found. The nature of emission centers in GaN and GaN-Mn thin films is discussed and a mechanism of luminescence in these films is proposed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 685: Symposium D – Advanced Materials and Devices for Large-Area Electronics , 2001 , D17.1.1
Copyright
Copyright © Materials Research Society 2001

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