Hostname: page-component-745bb68f8f-f46jp Total loading time: 0 Render date: 2025-01-15T00:56:38.220Z Has data issue: false hasContentIssue false
  • English
  • Français

Synthesis of Model Alumina Slurries for Damascene Patterning of Copper

Published online by Cambridge University Press:  18 March 2011

Byung-Chan Lee ,
David J. Duquette  and
Ronald J. Gutmann
Byung-Chan Lee
Affiliation:
Center for Integrated Electronics and Electronics Manufacturing, Rensselaer Polytechnic Institute Troy, NY 12180, U.S.A.
David J. Duquette
Affiliation:
Center for Integrated Electronics and Electronics Manufacturing, Rensselaer Polytechnic Institute Troy, NY 12180, U.S.A.
Ronald J. Gutmann
Affiliation:
Center for Integrated Electronics and Electronics Manufacturing, Rensselaer Polytechnic Institute Troy, NY 12180, U.S.A.
Get access

Abstract

Model alumina slurries for chemical-mechanical planarization (CMP) of copper have been studied using fundamental electrochemical concepts together with modification of surface tension and zeta-potential. A model slurry was established containing 3 wt% alumina (50 nm nominal size), 2 wt% potassium dichromate (K2Cr2O7) and 1 vol % DOWFAX, as abrasive, oxidizer and anionic surfactant, respectively, which resulted in blanket copper removal rates of 130 nm/min with smooth, low-particulate defect density surfaces without aggressive post-CMP cleaning. When used with a model silica-abrasive slurry to remove the Ta liner, well-defined damascene-patterned structures were achieved with low-particulate defect densities.

Open circuit potential measurement, potentiodynamic polarization, surface tension measurement, and zeta-potential measurement were used in developing the model slurries. The variations obtained with alternative abrasives, alternative oxidizers and alternative surfactants illustrate the principles of synthesizing slurries for Cu and Ta.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 671: Symposium M – Chemical-Mechanical Polishing 2001–Advances and Future Challenges , 2001 , M2.7
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Huynh, C., Rutten, M., Cheek, R., Linde, H., IEEE/SEMI Advanced Semiconductor, Manufacturing Conference Digest, p. 372 (1998).Google Scholar
2. Li, S.H., Miller, R.O., Chemical Mechanical Polishing in Silicon Processing, (Academic Press, 2000) p. 207.Google Scholar
3. Steigerwald, J. M., Murarka, S. P., and Gutmann, R. J., Chemical Mechanical Planarization of Microelectronic Materials, (John Wiley & Sons, Inc., 1997) p. 140, p. 189, p. 224.10.1002/9783527617746Google Scholar
4. Kaufman, F. B., Thompson, D.B., Broadie, R.E., Jaco, M.A., Guthrie, W.L., Pearson, D.J., and Small, M.B., J. Electrochem. Soc., 138 (11), 3460 (1991).10.1149/1.2085434Google Scholar
5. Lee, B.C., Wang, B., Duquette, D.J., Gutmann, R.J., CMP-MIC Conference digest, p. 47 (2000).Google Scholar
6. Jones, D.A., Corrosion, 2nd edition, (Prentice Hall, 1996) p. 60.Google Scholar
7. Pourbaix, M., Atlas of electrochemical equilibria in aqueous solutions, (National Association of Corrosion Engineering, 1974) p. 252, p 261, p. 384.Google Scholar
8. Feng, Y., Siow, K. S., Teo, W. K., Tan, K. L., Hsieh, A. K., Corrosion, 53, 389 (1997).Google Scholar
9. Parks, G. A., Chem. Rev., 65, 177 (1965).10.1021/cr60234a002Google Scholar
10. Bard, A.J., Parsons, R., Jordan, J., Standard Potentials in Aqueous Solution, (Marcel Dekker, Inc. New York, 1985) p. 89.Google Scholar
11. Lee, T.S., Corrosion, 39, 371 (1983).10.5006/1.3579287Google Scholar
12. Bahadur, A., J. Mater Sci & Eng, 17, 701 (1998).Google Scholar
13. Hunter, R.J., Foundations of Colloid Science, Vol. I, (Oxford University Press, New York, 1989) p.341.Google Scholar
14. Tadros, Th.F., Solid/Liquid Dispersions, (Academic Press Inc., London, 1987) p.77.Google Scholar
15. Rosen, M.J., Surfactants and Interfacial Phenomena, 2nd edn, (John Wiley & Sons, 1989) p. 7.Google Scholar
16. Shaw, D.J., Introduction to Colloid and Surface Chemistry, (Butterworth & Co Publishers Ltd., 1980) p.80.Google Scholar
17. Bowling, R. A., J. Electrochem. Soc., 132, 2208 (1985).Google Scholar
18. Lee, B.C., Ph.D Thesis, Rensselaer Polytechnic Institute, (2000) p. 143.Google Scholar
19. Mahulikar, D., Pasqualoni, A., CMP-MIC Conference Digest, p. 221 (1999).Google Scholar
20. Yang, K., CMP-MIC Conference Digest, p. 23 (2000).Google Scholar