Hostname: page-component-cd9895bd7-hc48f Total loading time: 0 Render date: 2024-12-29T12:15:18.937Z Has data issue: false hasContentIssue false
  • English
  • Français

Synthesis of Si Nanowires by Electroless Etching Technique and Their Integration Into I-III-VI2 Thin Films For Solar Cells

Published online by Cambridge University Press:  11 January 2012

H. Karaagac ,
M. Parlak  and
M. Saif Islam
H. Karaagac
Affiliation:
Department of Electrical and Computer Engineering, University of California at Davis, CA, 95616, USA
M. Parlak
Affiliation:
Department of Physics, Middle East Technical University, 06531 Ankara, Turkey
M. Saif Islam
Affiliation:
Department of Electrical and Computer Engineering, University of California at Davis, CA, 95616, USA
Get access

Abstract

Si nanowires (NWs) have been fabricated by Ag-assisted electroless etching technique using an HF/AgNO3 aqueous solution. Scanning electron microscopy (SEM) measurements have revealed that a highly dense array of Si NWs with length of ∼1.4 μm is formed over the surface of both n-type and p-type Si (100) substrates. Following the fabrication of Si NWs, electron-beam evaporated p-type AgGa0.5In0.5Se2 thin film was deposited on the n-type Si NWs to form p-n heterojunction solar cells. The fabricated solar cells yield a 5.50% power conversion efficiency under AM (1.5) illumination.

Keywords

thin filmnanostructurephotovoltaic
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1408: Symposium BB – Functional Nanowires and Nanotubes , 2012 , mrsf11-1408-bb20-21
Copyright
Copyright © Materials Research Society 2012

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Karaagac, H., et al. ., “Characterization of AgGa0.5In0.5Se2 thin films deposited by electron-beam technique,” Journal of Physics D-Applied Physics, vol. 42, pp. -, Aug 21 2009.Google Scholar
[2] Fan, Z. Y., et al. ., “Challenges and Prospects of Nanopillar-Based Solar Cells,” Nano Research, vol. 2, pp. 829–843, Nov 2009.Google Scholar
[3] Fu, Y. Q., et al. ., “Deep reactive ion etching as a tool for nanostructure fabrication,” 2009, pp. 1520–1526.Google Scholar
[4] Peng, K., et al. ., “Uniform, Axial-Orientation Alignment of One-Dimensional Single-Crystal Silicon Nanostructure Arrays,” Angewandte Chemie International Edition, vol. 44, pp. 2737–2742, 2005.Google Scholar
[5] Ozdemir, B., et al. ., “Effect of electroless etching parameters on the growth and reflection properties of silicon nanowires,” Nanotechnology, vol. 22, pp. -, Apr 15 2011.Google Scholar
[6] Peng, K. Q., et al. ., “Fabrication of single-crystalline silicon nanowires by scratching a silicon surface with catalytic metal particles,” Advanced Functional Materials, vol. 16, pp. 387–394, Feb 3 2006.Google Scholar