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Tem Assessment of Different Mechanisms Contributing to Stress Relaxation in Strained InGaAs/InAlAs Systems

Published online by Cambridge University Press:  25 February 2011

F. Peiro ,
A. Cornet ,
J.R. Morante ,
S. A. Clark  and
R.H. Williams
F. Peiro
Affiliation:
LCMM. Dept. Flstca Aplicada i Electrdnica. Univ. Barcelona. Diagonal 645–647. 08028 Barcelona, Spain Serveis Científico-Tècnics. Univ. Barcelona. Lluís Solé i Sabarís, 1–3. 08028 Barcelona, Spain
A. Cornet
Affiliation:
LCMM. Dept. Flstca Aplicada i Electrdnica. Univ. Barcelona. Diagonal 645–647. 08028 Barcelona, Spain
J.R. Morante
Affiliation:
LCMM. Dept. Flstca Aplicada i Electrdnica. Univ. Barcelona. Diagonal 645–647. 08028 Barcelona, Spain
S. A. Clark
Affiliation:
Dept. of Physics and Astronomy, Univ. of Wales, College of Cardiff. P.O. Box 913, Cardiff, Wales, U.K.
R.H. Williams
Affiliation:
Dept. of Physics and Astronomy, Univ. of Wales, College of Cardiff. P.O. Box 913, Cardiff, Wales, U.K.
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Abstract

A study by Transmission Electron microscopy (TEM) of strained InGaAs/InAlAs systems on InP substrates is presented. The influence of the lattice mismatch, epilayer thickness and modulation of the lattice parameter on the morphology of the system is analyzed. A discussion of the strain relaxation mechanisms occurring for each growth morphology is also presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 263: Symposium F – Mechanisms of Heteroepitaxial Growth , 1992 , 467
Copyright
Copyright © Materials Research Society 1992

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References

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