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Tem Characterization of Highly Oriented Diamond Films on (001) Silicon Synthesized by Bias Enhanced Nucleation Technique

Published online by Cambridge University Press:  10 February 2011

Seung-Joon Jeon ,
Arun Kumar Chawla ,
Young-Joon Baik  and
Changmo Sung
Seung-Joon Jeon
Affiliation:
Center for Advanced Materials, University of Massachusetts, Lowell, USA
Arun Kumar Chawla
Affiliation:
Center for Advanced Materials, University of Massachusetts, Lowell, USA
Young-Joon Baik
Affiliation:
Korea Institute of Science and Technology, Seoul, KOREA
Changmo Sung
Affiliation:
Center for Advanced Materials, University of Massachusetts, Lowell, USA
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Abstract

Highly oriented diamond films were deposited on a (001) silicon substrate by bias enhanced MPCVD technique. Three-dimensional TEM characterizations were carried out to understand the nucleation and growth mechanism of diamond grains. The surface morphology, defects, and misorientations of diamond films were compared as a function of synthesizing temperatures and thickness of the films. From our experimental results the texture formation mechanism of diamond films is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 458: Symposium W – Interfacial Engineering for Optimized Properties , 1996 , 429
Copyright
Copyright © Materials Research Society 1997

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References

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