Hostname: page-component-6bf8c574d5-8gtf8 Total loading time: 0 Render date: 2025-02-22T23:08:19.234Z Has data issue: false hasContentIssue false
  • English
  • Français

A Tem Investigation of Secondary Dislocations in Grain Boundaries in Germanium

Published online by Cambridge University Press:  25 February 2011

M. Griss ,
M. Seibt  and
H.J. Möller
M. Griss
Affiliation:
Physikalisches Instítut, University of Göttingen, 3400 Göttingen, FRG
M. Seibt
Affiliation:
Physikalisches Instítut, University of Göttingen, 3400 Göttingen, FRG
H.J. Möller
Affiliation:
Department of Materials Science and Engineering, Case Western Reserve University, Cleveland, Ohio 44106, USA
Get access

Abstract

Germanium bicrystals containing dissociated low energy grain boundaries with a common [011] tilt axis were studied. The dislocation structure of a grain boundary with a misorientation of about 28° has been investigated in detail and could be interpreted as a near-coincidence Σ 27 - tilt grain boundary. Both conventional and high-resolution techniques were applied to analyze the Burgers vectors of the secondary dislocation network. In all cases non - primitive Burgers vectors were observed. The comparison with previous results indicates that the Burgers vectors of the dislocation network may depend on the degree of misorientation of the bicrystal.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 945
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Aucouturier, M., Broniatowski, A., Chari, A., and Maurice, J.L., in Polycrystalline Semiconductors, ed. by Möller, H.J. et al. (Springer Verlag, Berlin, 1989) p. 64 Google Scholar
2 Wu, X.J., Szielko, W., and Haasen, P., J. de Physique 43, C1–135 (1982)Google Scholar
3 Broniatowski, A., Phys. Rev B36, 5895 (1987)Google Scholar
4 Skrotzki, W., Wendt, H., Carter, C. B., and Kohlstedt, D.L., Phil. Mag. A57, 383 (1988)Google Scholar
5 Werner, J., Strunk, H., J. Phys. 43, C1–89 (1982)Google Scholar
6 Jendrich, U. and Möller, H.J., Proc. Int. Conf. on Intergranular and Interphase Boundaries in Mat., Paris 1989, in pressGoogle Scholar
7 Marukawa, K., and Matsubara, Y., Trans JIM 20, 560 (1979)Google Scholar
8 d’Anterroches, C., and Bourret, A.: J. Phys. 43, C1–1 (1982), 783 (1984)Google Scholar
9 Bollmann, W., Crystal Defects and Crystalline Interfaces (Springer Publisher, Berlin, 1970)Google Scholar
10 Vaudin, M.D., Cunningham, B., and Ast, D.G., Scripta Met. 17, 191 (1983)Google Scholar
11 Elgat, Z., PhD Thesis, Cornell University 1985 Google Scholar
12 Möller, H.J. and Singer, H.H., in Defects in Crystals, ed. Mizera, E. (World Scientific, 1986) p. 535 Google Scholar