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TEM Study of Growth Defects in CVD Diamond Films

Published online by Cambridge University Press:  15 February 2011

Fred Y. Chen ,
Alexander H. King ,
Robert F. Salat  and
Glenn J. Fricano
Fred Y. Chen
Affiliation:
Department of Materials Science & Engineering, State University of New York at Stony Brook, Stony Brook, NY 11794–2275
Alexander H. King
Affiliation:
Vactronic Lab. Equipment, Inc., 160 Wilbur Place, Bohemia, NY 11716
Robert F. Salat
Affiliation:
Vactronic Lab. Equipment, Inc., 160 Wilbur Place, Bohemia, NY 11716
Glenn J. Fricano
Affiliation:
Vactronic Lab. Equipment, Inc., 160 Wilbur Place, Bohemia, NY 11716
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Abstract

Transmission electron microscopy (TEM) has been used to examine defects in diamond films grown by the microwave plasma-enhanced chemical vapor deposition (CVD) method. Graphite was used as the sole carbon source during the CVD process with silicon substrates. Growth defects including twins, stacking faults, dislocations and second-phase precipitates were observed in the films. In plan-view TEM, defect clusters at the centers of diamond grains were observed, where the film is also the thickest. Cross-sectional TEM was carried out to show that the defect clusters fan out from a single nucleation site in each grain, at the diamond-silicon interface. Possible growth mechanisms of the defect clusters in diamond grains are considered.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 363 , 1994 , 169
Copyright
Copyright © Materials Research Society 1995

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