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Tem Study of the Accidental Modulation of Mbe Grown AlxGal-x As

Published online by Cambridge University Press:  26 February 2011

E.G. Britton  and
W.M. Stobbs
E.G. Britton
Affiliation:
Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ, U.K.
W.M. Stobbs
Affiliation:
Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ, U.K.
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Abstract

Composition modulations with a wavelength of -1-3 nm have been observed by transmission electron microscopy in nominally uniform AlxGa1-x As grown by molecular beam epitaxy. We describe the characterisation of this phenomenon and discuss its possible origins, in the light of the reported existence of a long range ordered structure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 82: Symposium I – Characterization of Defects in Materials , 1986 , 361
Copyright
Copyright © Materials Research Society 1987

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References

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