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A TEM Study of the Microstructure Evolution of Cu(In,Ga)Se2 Films from Cu-Rich to In-Rich

Published online by Cambridge University Press:  21 March 2011

Y. Yan ,
K.M. Jones ,
J. AbuShama ,
M.M. Al-Jassim  and
R. Noufi
Y. Yan
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401
K.M. Jones
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401
J. AbuShama
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401
M.M. Al-Jassim
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401
R. Noufi
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401
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Abstract

The microstructure of Cu(In,Ga)Se2 (CIGS) films with compositions ranging from Cu-rich to In-rich was investigated by transmission electron microscopy (TEM) and energy-dispersive Xray spectroscopy (EDS). We found that the Cu-rich samples have larger grain sizes than the Inrich sample. In the Cu-rich samples, sub-interfaces were observed. The two sides of the subinterfaces were found to have different Cu concentration. In the In-rich sample, Ga inhomogeneity across grains was observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 668: Symposium H – II-IV Compound Semiconductor Photovoltaic Materials , 2001 , H6.10
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

1. Contreras, M.A., Egaas, B., Ramanathan, K., Hiltner, J., Swartzlander, A., Hasoon, F., and Noufi, R., Prog. Photovolt. Res. Appl. 7, 311 (1999).Google Scholar
2. Boehnke, U.C. and Kuhn, G., J. Materials Science 22, 1635 (1987).Google Scholar
3. Nishiwaki, S., Satoh, T., Hayashi, S., Hashimoto, Y., Negami, T., and Wada, T., J. Mater. Res. 14, 4514 (1999).Google Scholar
4. Park, J.S., Dong, Z., Kim, S., and Perepesko, J.H., J. Appl. Phys. 87, 3683 (2000).Google Scholar
5. AbuShama, J., Noufi, R., Yan, Y., Jones, K., Keyes, B., Dippo, P., Romero, M., Al-Jassim, M.M, and Alleman, J., in this proceedings.Google Scholar