Hostname: page-component-745bb68f8f-b6zl4 Total loading time: 0 Render date: 2025-01-15T00:20:18.619Z Has data issue: false hasContentIssue false
  • English
  • Français

Temperature Dependence of Ion Beam Mixing in Al

Published online by Cambridge University Press:  15 February 2011

S.T. Picraux ,
D. M. Follstaedt  and
J. Delafond
S.T. Picraux
Affiliation:
Sandia National Laboratories,† Albuquerque, NM 87185
D. M. Follstaedt
Affiliation:
Sandia National Laboratories,† Albuquerque, NM 87185
J. Delafond
Affiliation:
Sandia National Laboratories,† Albuquerque, NM 87185
Get access

Abstract

The atomic mixing of evaporated Al/Sb films and of Al/Ag films on Al<110> crystal substrates by 400 keV Xe ion beams has been investigated. Concentration depth profiles were measured in situ by 1.5 MeV He scattering as a function of Xe fluence from 2 to 32×1015 Xe/cm2. The initial mixing rates are similar at 85 and 300 K; mixing proceeds by rapid motion of Al (≈15 Al/Xe) into and uniformly through the thickness of the Sb film and by a slow motion of Sb (≈0.5 Sb/Xe) into the Al<110> substrate. More rapid Sb mixing into Al occurs for polycrystalline Al. The rate for Al into Sb slows at concentrations approaching the stable AlSb phase. Appreciably higher rates of Sb mixing into Al (2.2 to 2.8 Sb/Xe) occur at 575 K. Mixing rates for the highly soluble system, Al/Ag, are compared to the nearly insoluble Al/Sb at 85 and 300 K. Appreciably higher rates are found for Ag than for Sb, suggesting the influence of chemical driving forces even at these low temperatures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 7 , 1981 , 71
Copyright
Copyright © Materials Research Society 1982

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Footnotes

*

This work performed at Sandia National Laboratories supported by the U.S. Department of Energy under Contract number DE-AC04-76DP00789.

†

A U.S. Department of Energy Facility.

**

Present address: Poitiers University, Poitiers, France

References

REFERENCES

1.Mayer, J. W., Lau, S. S., Tsaur, B-Y., Poate, J. M. and Hirvonen, J. K. in Ion Implantation Metallurgy, Ed by Preece, C. M. and Hirvonen, J. K. (Metallurgical Society of AIME, Warrendale, Pa., 1980).Google Scholar
2.Matteson, S., Roth, J. and Nicolet, M-A., Radiation Effects 42, 217 (1979).Google Scholar
3.Littmark, U. and Hofer, W. O., Nucl. Inst. and Meth., 168, 329 (1980).Google Scholar
4.Gras-Marti, A. and Sigmund, P., Nucl. Inst. and Meth. 180, 211 (1981).Google Scholar
5.Christel, L. A., Gibbons, J. F. and Mylroie, S., Nuc. Inst. and Meth. 182/183, 187 (1981);Google Scholar
Matteson, S., Appl. Phys. Letters 39, 288(1981).Google Scholar
6.Brice, D. K., private communication.Google Scholar
7. See also, Paine, B. M., Nicolet, M-A. and Banwell, T. C., these proceedings.Google Scholar
8. We previously reported a more rapid mixing rate at 80 K of 2.5 Sb/Xe into Al [Delafond, J., Picraux, S. T. and Knapp, J. A., Appl. Phys. Letters 38, 237 (1981)]. The reason for the more rapid mixing observed in the earlier studies does not appear to be accounted for by any single factor. In the present studies the Xe fluences and background corrections were independently checked by He scattering from pure Al strips which were bombarded simultaneously with the Al/Sb/Al samples.Google Scholar