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Temperature Dependence of Optical Properties and Minority Carrier Diffusion Length in a-SiGe:H,F

Published online by Cambridge University Press:  26 February 2011

R. Schwarz ,
K. Dietrich ,
S. Goedecker ,
J. Kolodzey ,
D. Slobodin  and
S. Wagner
R. Schwarz
Affiliation:
Physik-Department, Technische Universität München, West Germany
K. Dietrich
Affiliation:
Physik-Department, Technische Universität München, West Germany
S. Goedecker
Affiliation:
Physik-Department, Technische Universität München, West Germany
J. Kolodzey
Affiliation:
Department of Electrical Engineering, Princeton University Princeton NJ 08544, U.S.A. Department of Electrical Engineering, University of Illinois, Urbana-Champaign, Ill USA
D. Slobodin
Affiliation:
Department of Electrical Engineering, Princeton University Princeton NJ 08544, U.S.A. Polaroid Corp., Waltham, Mass., USA
S. Wagner
Affiliation:
Department of Electrical Engineering, Princeton University Princeton NJ 08544, U.S.A.
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Abstract

We report the temperature dependence of several optical parameters of thin films of hydrogenated and fluorinated amorphous silicon alloys (a-SiGe:H,F) between 5 and 95 °C. The absorption coefficient near the optical band gap Eg increases with temperature. From this increase we calculate a temperature coefficient for Eg of −4.5×10−4 eV/K, which is essentially independent of band gap The concomittant change of index of refraction n was determined in the near infrared region from the interference pattern in the reflection spectra. The temperature coefficient dn/n/dT is 0.9×10−4 K−1 for un-alloyed a-Si:H,F and increases with increasing Ge atomic fraction. The changes of Eg and n with temperature are consistent with a simple quantummechanical description of the complex dielectric constant. We also report the temperature dependence of the minority carrier diffusion length in a-SiGe:H,F.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 95: Symposium E – Amorphous Silicon Semiconductors--Pure and Hydrogenated , 1987 , 353
Copyright
Copyright © Materials Research Society 1987

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