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Tetragonal Strain in MBE GexSi1-x Films Grown on (100) Si Observed by Ion Channeling and X-Ray Diffraction

Published online by Cambridge University Press:  22 February 2011

A. T. Fiory ,
L. C. Feldman ,
J. C. Bean  and
I. K. Robinson
A. T. Fiory
Affiliation:
At&T Bell Laboratories, Murray Hill, New Jersey 07974
L. C. Feldman
Affiliation:
At&T Bell Laboratories, Murray Hill, New Jersey 07974
J. C. Bean
Affiliation:
At&T Bell Laboratories, Murray Hill, New Jersey 07974
I. K. Robinson
Affiliation:
At&T Bell Laboratories, Murray Hill, New Jersey 07974
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Abstract

Structure of GexSi1-x alloy films grown on (100) Si by molecular beam epitaxy is analyzed by MeV He+ ion channeling and X-ray diffraction as functions of Ge concentration, film thickness and growth temperature. Critical thicknesses for pseudomorphic growth are determined for x ≤ 0.5, where coherent tetragonally-strained layers are observed. The average strain decreases approximately as the square-root of thickness when the critical thickness is exceeded. At temperatures near the threshold for islanding growth, surface roughness appears as a precursor to degradation of strained-layer epitaxy. No effect on the amount of the tetragonal strain was found in a study of ion-beam damage.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 25: Symposium C – Thin Films and Interfaces II , 1983 , 497
Copyright
Copyright © Materials Research Society 1984

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References

REFERENCES

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