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TFA Image Sensors for Low Light Level Detection

Published online by Cambridge University Press:  01 February 2011

Jürgen Sterzel ,
Frank Blecher ,
Matthias Hillebrand ,
Bernd Schneider  and
Markus Böhm
Jürgen Sterzel
Affiliation:
Institut für Mikrosystemtechnik (IMT), Universität-GH Siegen, D-57068 Siegen, Germany
Frank Blecher
Affiliation:
Institut für Mikrosystemtechnik (IMT), Universität-GH Siegen, D-57068 Siegen, Germany
Matthias Hillebrand
Affiliation:
Institut für Mikrosystemtechnik (IMT), Universität-GH Siegen, D-57068 Siegen, Germany
Bernd Schneider
Affiliation:
Institut für Mikrosystemtechnik (IMT), Universität-GH Siegen, D-57068 Siegen, Germany
Markus Böhm
Affiliation:
Institut für Mikrosystemtechnik (IMT), Universität-GH Siegen, D-57068 Siegen, Germany
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Abstract

TFA technology, using ASICs coated with amorphous silicon based photo detectors, opens new applications for CMOS image sensors. One particular field of interest is the detection of low light level images with pixel photocurrents in the femtoampere range and below. In this paper we describe the effects of the capacitances on the pixel amplifier, we derive noise values for the detector and the amplifier, and we estimate the gain fixed pattern noise level. An inverter circuit providing a 40-fold increase of the charge conversion gain is presented.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 715: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2002 , 2002 , A7.1
Copyright
Copyright © Materials Research Society 2002

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References

1. Zheng, X., Wrigley, C., Yang, G., and Pain, B., in Proceedings of the 2000 IEEE International SOI Conference, Wakefield, MA, pp. 138–139 (2000)Google Scholar
2. Böhm, M., Blecher, F., Eckhardt, A., Seibel, K., Schneider, B., Sterzel, J., Benthien, S., Keller, H., Lule, T., Rieve, P., Sommer, M., Uffel, B. van, Librecht, F., Lind, R. C., Humm, L., Efron, U., and Roth, E., in Amorphous and Microcrystalline Silicon Technology, edited by Wagner, S., Hack, M., Branz, H. M., Schropp, R., and Shimizu, I., (Mater. Res. Soc. Proc. 507, Pittsburgh, PA 1998), pp. 327–338 Google Scholar
3. Schneider, B., Rieve, P., and Böhm, M. in Handbook on Computer Vision and Applications, ed. by Jähne, B., Hauβecker, H., and Geiβler, P. (Academic Press, Boston, 1999), pp. 237–270 Google Scholar
4. Lule, T., Benthien, S., Keller, H., Mütze, F., Rieve, P., Seibel, K., Sommer, M., and Böhm, M., IEEE Trans. Elec. Dev. ED 47, pp. 2110–2122 (2000)Google Scholar
5. Blecher, F., Schneider, B., Sterzel, J., and Böhm, M., in Amorphous and Heterogeneous Silicon Thin Films: Fundamentals to Devices, edited by Branz, H. M., Collins, R. W., Okamoto, H., Guha, S., and Schropp, R., (Mater. Res. Soc. Proc. 557, Pittsburgh, PA 1999), pp. 869–874 Google Scholar
6. Blecher, F., Schneider, B., Sterzel, J., Hillebrand, M., Benthien, S., and Böhm, M., J. Non-Crys. Solids, 266-269, pp. 1188–1192 (2000)10.1016/S0022-3093(99)00924-2Google Scholar
7. Kozlowski, L. J., Proc. SPIE, 2745, pp. 2–11 (1996)10.1117/12.243526Google Scholar