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Theoretical Investigation of Effective Quantum Dots Induced by Strain in Semiconductor Wires

Published online by Cambridge University Press:  09 August 2011

Kenji Shiraishi ,
Masao Nagase ,
Seiji Horiguchi  and
Hiroyuki Kageshima
Kenji Shiraishi
Affiliation:
NTT Basic Research Laboratories, Atsugi-shi, Kanagawa 243-0198, Japan. siraisi @will.brl.ntt.co.jp
Masao Nagase
Affiliation:
NTT Basic Research Laboratories, Atsugi-shi, Kanagawa 243-0198, Japan. siraisi @will.brl.ntt.co.jp
Seiji Horiguchi
Affiliation:
NTT Basic Research Laboratories, Atsugi-shi, Kanagawa 243-0198, Japan. siraisi @will.brl.ntt.co.jp
Hiroyuki Kageshima
Affiliation:
NTT Basic Research Laboratories, Atsugi-shi, Kanagawa 243-0198, Japan. siraisi @will.brl.ntt.co.jp
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Abstract

A new fabrication technique for quantum dots is proposed on the basis of theoretical studies. It is known that the self-limiting phenomena of silicon oxidation are governed by the large stress induced by the volume expansion. We estimated the change in the band parameter of the silicon under the stress induced by the oxidation. The results show that the band-gap of the silicon considerably decreases under two-dimensional compressive strain. Accordingly, introducing strain to a small part of a Si wire results in the formation of a “strain-induced effective quantum dot”. Moreover, we also propose theoretically a new procedure for fabricating a silicon single electron transistor by the combination of silicon oxidation and nitridation techniques.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 536: Symposium F – Microcrystalline & Nanocrystalline Semiconductors - 1998 , 1998 , 533
Copyright
Copyright © Materials Research Society 1999

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