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A Theoretical Study of Structural Disorder and Photoluminescence Linewidth in InGaAs/GaAs Self Assembled Quantum Dots

Published online by Cambridge University Press:  21 March 2011

Yih-Yin Lin ,
Hongtao Jiang  and
Jasprit Singh
Yih-Yin Lin
Affiliation:
Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109-2122
Hongtao Jiang
Affiliation:
Broadcom Corporation, Irvine, CA 92618
Jasprit Singh
Affiliation:
Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109-2122
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Abstract

The past few years have seen considerable efforts in growth and device application of selfassembled quantum dots. However, the photoluminescence (PL) linewidth, which represents structural fluctuations in dot sizes, is still in the range of 30–50 meV. This large linewidth has deleterious effects on devices such as lasers based on self-assembled dots. In this paper we will examine the configuration-energy diagram of self-assembled dots. Our formalism is based on: (1) an atomistic Monte Carlo method which allows us to find the minimum energy configuration and strain tensors as well as intermediate configurations of dots; (2) an 8-band k·p method to calculate the electronic spectra. We present results on the strain energy per unit cell for various distributions of InAs/GaAs quantum dots and relate them to published experimental results. In particular we examine uncovered InAs/GaAs dots and show that in the uncovered state a welldefined minimum exists in the configuration energy plot. The minimum corresponds to the size that agrees well with experiments.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 692: Symposium H – Progress in Semiconductor Materials for Optoelectronic Applications , 2001 , H3.4.1
Copyright
Copyright © Materials Research Society 2002

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