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Theory and Computer Simulation of Grain-Boundary and Void Dynamics in Polycrystalline Conductors

Published online by Cambridge University Press:  15 February 2011

Dimitrios Maroudas  and
Sokrates T. Pantelides
Dimitrios Maroudas
Affiliation:
Department of Chemical and Nuclear Engineering, University of California, Santa Barbara, CA 93106
Sokrates T. Pantelides
Affiliation:
Department of Physics and Astronomy, Vanderbilt University, Nashville, TN 37235
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Abstract

Microstructure evolution in polycrystalline metallic thin films under stress and electric current underlies many reliability issues in microelectronics. This paper presents a quantitative analysis of grain-boundary and void dynamics based on the coupling between bulk and interfacial mass transport phenomena with elastic deformations and current stressing. The formation and growth of intergranular voids in bamboo-structure conductor lines due to stresses that develop during processing is analyzed. The analysis is aided by self-consistent simulation of bulk and grain-boundary diffusional processes using bicrystal models with elastic grains. A systematic analysis is presented of the morphological evolution of transgranular voids in aluminum lines under current densities that are typical of electromigration testing. The effects of the electric field and surface properties on the morphological stability of voids are examined and morphologies that bifurcate from rounded or wedge-like void shapes are predicted. The theoretical results are discussed in the context of experimental data for void propagation under electromigration conditions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 391: Symposium T – Materials Reliability in Microelectronics V , 1995 , 151
Copyright
Copyright © Materials Research Society 1995

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