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Thermal and Electromigration-Induced Strains in Copper Conductor Lines: X-ray Microbeam Measurements and Analysis

Published online by Cambridge University Press:  01 February 2011

G. Wang ,
H. Zhang ,
G. S. Cargill III ,
C. -K. Hu ,
Y. Ge  and
A. Maniatty
G. Wang
Affiliation:
gaw2@lehigh.eduLehigh UniversityMaterials Science and EngineeringBethlehem PA18015United States
H. Zhang
Affiliation:
hoz204@lehigh.edu, Lehigh University, Materials Science and Engineering, Bethlehem, PA, 18015, United States
G. S. Cargill III
Affiliation:
gsc3@lehigh.edu, Lehigh University, Materials Science and Engineering, Bethlehem, PA, 18015, United States
C. -K. Hu
Affiliation:
haohu@us.ibm.com, IBM Research, Yorktown Hts., NY, 10598, United States
Y. Ge
Affiliation:
geyz@scorec.rpi.edu, Rensselaer Polytechnic Institute, Troy, NY, 12180, United States
A. Maniatty
Affiliation:
maniatty@scorec.rpi.edu, Rensselaer Polytechnic Institute, Troy, NY, 12180, United States
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Abstract

We have carried out measurements of electromigration-induced strains in copper conductor lines using microbeam energy dispersive x-ray diffraction. Strains developed in random texture damascene Cu 2μm-wide, 0.16 μm-thick conductor lines with TaN liners in low-k dielectric during electromigration at 350°C are much smaller than electromigration-induced strains in (111) fiber texture Al-on-Si, 10μm-wide, SiO2 passivated conductor lines. The reasons for these differences in electromigration behavior may involve the different roles of grain boundary and interface diffusion paths and the different passivation structures and materials for the two types of samples.

Keywords

electromigrationCux-ray diffraction (XRD)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 914: Symposium F – Materials, Technology and Reliability of Low-k Dielectrics and Copper Interconnects , 2006 , 0914-F06-06
Copyright
Copyright © Materials Research Society 2006

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References

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