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Thermal Behaviour of Au/Pd/GaAs Contacts

Published online by Cambridge University Press:  25 February 2011

B. Pécz ,
R. Veresegyházy ,
I. Mojzes ,
G. Radnóczi ,
A. Sulyok  and
V. Malina
B. Pécz
Affiliation:
Research Institute for Technical Physics of the Hungarian Academy of Sciences, H–1325 Budapest, P.O.Box 76, Hungary
R. Veresegyházy
Affiliation:
Research Institute for Technical Physics of the Hungarian Academy of Sciences, H–1325 Budapest, P.O.Box 76, Hungary
I. Mojzes
Affiliation:
Research Institute for Technical Physics of the Hungarian Academy of Sciences, H–1325 Budapest, P.O.Box 76, Hungary
G. Radnóczi
Affiliation:
Research Institute for Technical Physics of the Hungarian Academy of Sciences, H–1325 Budapest, P.O.Box 76, Hungary
A. Sulyok
Affiliation:
Research Institute for Technical Physics of the Hungarian Academy of Sciences, H–1325 Budapest, P.O.Box 76, Hungary
V. Malina
Affiliation:
Institute of Radio Engineering and Electronics of the Czechoslovak Academy of Sciences, Lumumbova 1, 18251 Prague 8, Czehoslovakia
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Abstract

Au(85nm)/Pd(55nm)/GaAs(100) samples were heat treated in the 325-425°C temperature range. The annealed samples have been investigated using Rutherford Backscattering Spectrometry, Auger Electron Spectroscopy and Transmission Electron Microscopy. The gold layer remained largely unreacted up to 300°C. Significant Pd diffusion into GaAs consuming a 50–60 nm thick layer of GaAs .is evident in the case of sample annealed at 325°C and a slight Au diffusion is also noticeable. In the sample annealed at 350°C the spreading of palladium was very quick. A strong reaction took place between the GaAs and the metallization in the case of sample heat treated at 375°C. At this temperature we have identified the PdGa phase using electron diffraction.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 181: Symposium B – Advanced Metallizations in Microelectronics , 1990 , 319
Copyright
Copyright © Materials Research Society 1990

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References

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