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Thermal Modulated Esr For The Study Of Defects In a-SiC:H Films

Published online by Cambridge University Press:  16 February 2011

F. Demichelis ,
F. Giorgis ,
C. F. Pirri ,
E. Tresso ,
L. Ravera  and
V. Rigato
F. Demichelis
Affiliation:
Dipartimento di Fisica del Politecnico di Torino, Italy
F. Giorgis
Affiliation:
Dipartimento di Fisica del Politecnico di Torino, Italy
C. F. Pirri
Affiliation:
Dipartimento di Fisica del Politecnico di Torino, Italy
E. Tresso
Affiliation:
Dipartimento di Fisica del Politecnico di Torino, Italy
L. Ravera
Affiliation:
Dipartimento di Chimica Università di Torino, Italy
V. Rigato
Affiliation:
Laboratori Nazionali INFN di Legnare, Padova e Unità INFM di Padova, Italy
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Abstract

In this work we present Thermal Modulation Electron Spin Resonance Measurements performed on a-SiC:H films prepared by Plasma Enhanced Chemical Vapour Deposition with energy gap in the range 1.8–2.5 eV. The results have been compared with previously obtained photothermal and photoconductive ones and have been interpreted by means of a defect distribution which takes into account both silicon based and carbon based defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 336: Symposium A – Amorphous Silicon Technology - 1994 , 1994 , 535
Copyright
Copyright © Materials Research Society 1994

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References

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