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Thermally Stable Schottky Contacts TO n-GaN

Published online by Cambridge University Press:  10 February 2011

H. S. Venugopalan  and
S. E. Mohney
H. S. Venugopalan
Affiliation:
Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA 16802
S. E. Mohney
Affiliation:
Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA 16802
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Abstract

The barrier heights of Ni/Ga/Ni and Re Schottky contacts to n-GaN were investigated by current-voltage (I-V) and capacitance-voltage (C-V) measurements. The elemental Ni contacts were also investigated for comparison. The Ni/Ga/Ni and Re diodes were stable on short term annealing up to 700 °C. It was also shown that the Ni/Ga/Ni (84 at% Ni, 16 at% Ga) diodes were more stable than Ni diodes. This work provides the first demonstration of Schottky diodes to n-GaN that are stable upon annealing at 700 °C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 512: Symposium F – Wide Bandgap Semiconductors for High Power, High Frequency , 1998 , 279
Copyright
Copyright © Materials Research Society 1998

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References

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