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Thermodynamic Stability of Binary Oxides in Contact with Silicon

Published online by Cambridge University Press:  15 February 2011

K. J. Hubbard  and
D. G. Schloma
K. J. Hubbard
Affiliation:
The Pennsylvania State University, Department of Materials Science and Engineering, University Park, PA, 16802-5005, schlom@ems.psu.edu
D. G. Schloma
Affiliation:
The Pennsylvania State University, Department of Materials Science and Engineering, University Park, PA, 16802-5005, schlom@ems.psu.edu
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Abstract

Using tabulated thermodynamic data, a comprehensive investigation of the thermodynamic stability of binary oxides in contact with silicon at 1000 K was conducted. Reactions between silicon and each binary oxide at 1000 K, including those involving ternary phases, were considered. Sufficient thermodynamic data exists to conclude that all binary oxides except the following are unstable in contact with silicon at 1000 K: Li20, the alkaline earth oxides (BeO, MgO, CaO, SrO, and BaO), the column IIIB oxides (Sc2O3, Y2O3, and Re2O3 where Re is a rare earth), ThO2, UO2, ZrO2, HfO2, and Al2O3. Of these remaining oxides, sufficient thermodynamic data exists to conclude that BeO, MgO, CaO, and ZrO2 are thermodynamically stable in contact with silicon at 1000 K. Our results are consistent with reported investigations of silicon/binary oxide interfaces and identify candidate materials for future investigations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 401: Symposium G – Epitaxial Oxide Thin Films II , 1995 , 33
Copyright
Copyright © Materials Research Society 1996

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