Hostname: page-component-745bb68f8f-cphqk Total loading time: 0 Render date: 2025-01-30T00:02:44.503Z Has data issue: false hasContentIssue false
  • English
  • Français

Thermoelectric Power in Quantum Confined Optoelectronic Materials under Classically Large Magnetic Field

Published online by Cambridge University Press:  25 February 2011

Kamakhya P. Ghatak ,
B. De ,
M. Mondal  and
S. N. Biswas
Kamakhya P. Ghatak
Affiliation:
Department of Electronics and Telecommunication Engineering, Faculty of Engineering and Technology, University of Jadavpur, Calcutta-700032, INDIA.
B. De
Affiliation:
13 Little Brook Road, CT- 06820, DARIEN, U.S.A.
M. Mondal
Affiliation:
Department of Physics, Y. S. Palpar a College, P. O.Box 721458, Midnapore, West Bengal, INDIA.
S. N. Biswas
Affiliation:
Department of Electronics and Telecommunication Engineering, B. E. College, Shibpur, Howrah-711103, West Bengal, INDIA.
Get access

Abstract

We shall study the thermoelectric power under classically large magnetic field (TPM) in optoelectronic materials of quantum wells (QWs), quantum well wires (QWW’s), quantum dots (QDs) and compare the same with the hulk specimens of optoelectronic materials by formulating the respective electron dispersion law. The TPM increases with decreasing electron concentration in an oscillatory manner in all the cases, taking n-Hg1-xC dxTe as an example. The TPM in QD is greatest and the least for quantum wells respectively. The theoretical results are in agreement with the experimental observations as reported elsewhere.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 181: Symposium B – Advanced Metallizations in Microelectronics , 1990 , 325
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Scifres, D.R., Lindstrom, C., Burnham, R. D., Streifer, W. and Paoli, T.L., Electron. Letts. 19, 170 (1983)CrossRefGoogle Scholar
2. Salomon, P.M., Proc. IEEE 70, 439 (1982);Google Scholar
Schlesinger, T.L. and Kuech, T., Appl. Phys. Letts. 49, 519 (1986).CrossRefGoogle Scholar
3. Hieblum, H., Thomas, D.C., Knoedler, C.M. and Nathan, M. I., Appl. Phys. Letts. 47, 1105 (1985);CrossRefGoogle Scholar
Torucha, S. and Okamoto, H., Appl. Phys. Letts. 45, 1 (1984).Google Scholar
4. Zawadzki, W., Adv. Phys. 23, 435 (1974);CrossRefGoogle Scholar
Springer series in Solid State Sciences 53, 79 (1984).Google Scholar
5. Ghatak, K.P. and Mondal, M., Phys. Stat. Sol. (b) 135, 819 (1986);CrossRefGoogle Scholar
Tsidilkovski, I.M., Band Structure of Semiconductors (Pergamon Press, London, 1982) p. 313;Google Scholar
Ghatak, K.P. and Mondal, M., J. Appl. Phys. 65, 3480 (1988).CrossRefGoogle Scholar
6. Lu, P. Y., Wang, C. H., Williams, C. M., Chu, S.N.G. and Stiles, C. M., Appl. Phys. Letts. 49, 1372 (1986).CrossRefGoogle Scholar
7. Nag, B.R., Electron Transport in Compound Semiconductors, Springer-Verlag, Berlin, Heidelberg, New York, 1980.CrossRefGoogle Scholar
8. Mitra, B., Ghoshal, A. and Ghatak, K. P., Acta Phys. Slov. 39, 45 (1989).Google Scholar
9. Gelmont, R.L., Jour. Theor. and Exp. Phys. 98, 101 (1989).Google Scholar
10. Ghatak, K. P. and Mondal, M., J. Thin. Solid Films, 148, 219 (1987).CrossRefGoogle Scholar