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Thermoelectric properties of polycrystalline Si1-xGex grown by die-casting vertical Bridgman growth technique

Published online by Cambridge University Press:  01 February 2011

Takashi Baba ,
Tsutomu Iida ,
Hisashi Hirahara ,
Takashi Itoh ,
Masayasu Akasaka  and
Yoshifumi Takanashi
Takashi Baba
Affiliation:
baba_t_k_s@yahoo.co.jp, student, 2641 Yamazaki, Noda-shi, Chiba, 278-8510, Japan
Tsutomu Iida
Affiliation:
iida_tsu@rs.noda.tus.ac.jp, Japan
Hisashi Hirahara
Affiliation:
baba_t_k_s@yahoo.co.jp, Japan
Takashi Itoh
Affiliation:
baba_t_k_s@yahoo.co.jp, Japan
Masayasu Akasaka
Affiliation:
baba_t_k_s@yahoo.co.jp, Japan
Yoshifumi Takanashi
Affiliation:
baba_t_k_s@yahoo.co.jp, Japan
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Abstract

The die-casting growth process combined with an advanced version of the Bridgman method was employed for manufacturing the multicrystalline bulk crystal of Si1−xGex. This process provides a form of phase transformation which is completely different from that predicted by the Si-Ge phase diagram. By combining this growth with subsequent heat treatment of the precipitated sample, the variation in the germanium content obtained was within ± 4 % for Si0.65Ge0.35 sample with a carrier concentration in the mid-1018 cm−3. The power factor obtained exhibited a quite flat characteristic over the temperature range of room temperature to 800 K. However, there was a drop in the Seebeck coefficient at about 800 K, which corresponded to a rise in the electrical conductivity. The value of the thermal conductivity was about 0.04 W/cmK at temperatures ranging from 600 to 900 K. The maximum value of the figure of merit obtained for the grown Si0.65Ge0.35 sample was 0.19 at 773 K.

Keywords

thermoelectricitycrystal growthSi
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 886: Symposium F – Materials and Technologies fore Direct Thermal-to-Electric Energy Conversion , 2005 , 0886-F11-10
Copyright
Copyright © Materials Research Society 2006

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