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Thermoelectric Properties of RhSb3 Crystals and Thin Films

Published online by Cambridge University Press:  15 February 2011

Baoxing Chen ,
Jun-Hao Xu ,
Siqing Hu  and
Ctirad Uher
Baoxing Chen
Affiliation:
Department of Physics, University of Michigan, Ann Arbor, MI 48109–1120
Jun-Hao Xu
Affiliation:
Department of Physics, University of Michigan, Ann Arbor, MI 48109–1120
Siqing Hu
Affiliation:
Department of Physics, University of Michigan, Ann Arbor, MI 48109–1120
Ctirad Uher
Affiliation:
Department of Physics, University of Michigan, Ann Arbor, MI 48109–1120
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Abstract

RhSb3 belongs to a class of solids called skutterudites which were recently identified as promising novel thermoelectric materials. Our intent was to explore thin film growth of RhSb3 and to assess the thermoelectric properties of such films. RhSb3 films were prepared by electron-beam deposition on silicon and sapphire substrates. Thermopower, electrical resistivity and the Hall effect were measured over the temperature range from 2K to 300K. The data are compared to measurements on single crystals of RhSb3.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 452 , 1996 , 1037
Copyright
Copyright © Materials Research Society 1997

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References

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