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Thermomechanical stress in silicon on quartz wafer bonding and Smart Cut® process

Published online by Cambridge University Press:  21 March 2011

Yu-Lin Chao ,
Qin-Yi Tong  and
Ulrich M. Gösele
Yu-Lin Chao
Affiliation:
Wafer bonding Laboratory, Department of Mechanical Engineering and Material Science, Duke University, Durham, NC 27708-0300
Qin-Yi Tong
Affiliation:
Wafer bonding Laboratory, Department of Mechanical Engineering and Material Science, Duke University, Durham, NC 27708-0300 Microelectronics Center, Research Triangle Institute, RTP, NC 27709
Ulrich M. Gösele
Affiliation:
Wafer bonding Laboratory, Department of Mechanical Engineering and Material Science, Duke University, Durham, NC 27708-0300 Max-Plank Institute of Microstructure Physics, Weinberg 2, D-06120 Halle, Germany
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Abstract

The thermal stress behavior of silicon/quartz bonded wafer pairs is examined. Sliding, debonding, and cracking are the observed mechanisms of relaxation. When the elastic energy due to the different thermal expansion coefficients of silicon and quartz exceeds the bonding energy, sliding will start and lead to a serrated curve on the curvature-versus-temperature graph. Finally, debonding will occur once the peeling stress exceeds the interface bonding strength. The debonded parts crack due to the overhang structure, and debonding-cracking processes continue during a further temperature increase. The stress behavior of the hydrogen-implantation induced layer splitting process (the so-called “Smart-Cut process”) of silicon/quartz pairs is also monitored in a stress measurement setup. It is observed that Smart-Cut process is a sudden process in agreement with the observations reported in the literature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 681: Symposium I – Wafer Bonding and Thinning Techniques for Materials Integration , 2001 , I5.10
Copyright
Copyright © Materials Research Society 2001

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References

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