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Thickness Dependence of Leakage Current Behavior in Epitaxial (Ba,Sr)TiO3 Thin Films

Published online by Cambridge University Press:  17 March 2011

Kun Ho Ahn ,
Sang Sub Kim  and
Sunggi Baik
Kun Ho Ahn
Affiliation:
Dept. of Materials Science and Engineering, Pohang University of Science and Technology, Pohang 790-784, Korea
Sang Sub Kim
Affiliation:
Dept. of Materials Science and Metallurgical Engineering, Sunchon National University, Sunchon 540-742, Korea
Sunggi Baik
Affiliation:
Dept. of Materials Science and Engineering, Pohang University of Science and Technology, Pohang 790-784, Korea
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Abstract

Thickness dependence of leakage current behaviors was investigated in epitaxial (Ba0.5Sr0.5)TiO3 thin films with different thicknesses of 55 - 225 nm prepared on Pt(001)/MgO(001) substrates by a radio-frequency magnetron sputtering technique. Below a certain critical film thickness (≤ 55 nm), the Schottky emission is a ruling leakage conduction mechanism over a wide electric field range. In contrast, in thicker films (> 55 nm), the Schottky emission still operates at low electric fields, however at high electric fields the Fowler-Nordheim (F-N) tunneling dominates. The transition film thickness appears to be associated with overlapping of the depletion layers formed at the top and bottom electrode interfaces.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 688: Symposium C – Ferroelectric Thin Films X , 2001 , C13.7.1
Copyright
Copyright © Materials Research Society 2002

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References

1. Dietz, G. W., Schumacher, M., Waser, R., Streiffer, S. K., Basceri, C., and Kingon, A. I., J. Appl. Phys. 82, 2359 (1997).Google Scholar
2. Shin, J. C., Park, J., Hwang, C. S., and Kim, H. J., J. Appl. Phys. 86, 506 (1997).Google Scholar
3. Takeshima, Y., Tanaka, K., and Sakabe, Y., Jpn. J. Appl. Phys. 39, 5389 (2000).Google Scholar
4. Fitsilis, F., Regnery, S., Ehrhart, P., Waser, R., Schienle, F., Schumacher, M., Juergensen, H., to be published in Integrated Ferroelectrics (2001).Google Scholar
5. Ahn, K. H., Kim, S. S., and Baik, S., to be published in Integrated Ferroelectrics (2001).Google Scholar
6. Shannon, J. M., Solid-St Electron. 19, 537 (1976).Google Scholar