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Thickness Effect On The Crystallization Kinetics OfElectrolessly-Deposited Ni(P) Thin Films

Published online by Cambridge University Press:  15 February 2011

L. T. Shi
Affiliation:
IBM Thomas J.Watson Research Center, Yorktown Heights, NY 10598
E. J. M. O'Sullivan
Affiliation:
IBM Thomas J.Watson Research Center, Yorktown Heights, NY 10598
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Abstract

In order to understand thickness and interfacial effects on thecrystallization kinetics of amorphous solids, Ni(P) thin films electrolesslydeposited on Cu seed layers were annealed at constant heating rates or atconstant temperatures in a DSC to obtain activation energies andAvramiexponents. It was found that the activation energy of crystallization inNi(P) changes asa function of sample thickness when the sample thickness isless than 1.0 μm. Furthermore, the Avrami exponent was found to change notonly as a function of thickness but also as a function of annealingtemperature.

Type
Research Article
Copyright
Copyright © Materials Research Society 1994

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References

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