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Thickness-dependent Structural Relaxation of Plasma-Enhanced Chemical Vapor Deposited Silicon Oxide Films during Thermal Processing

Published online by Cambridge University Press:  01 February 2011

Zhiqiang Cao  and
Xin Zhang
Zhiqiang Cao
Affiliation:
Department of Manufacturing Engineering, Boston University, Boston, Massachusetts 02215, USA
Xin Zhang
Affiliation:
Department of Manufacturing Engineering, Boston University, Boston, Massachusetts 02215, USA
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Abstract

This paper presents a microstructure-based mechanism which elucidates seams as a source of density change and voids as a source of plastic deformation, accompanied by a viscous flow. This theory was then applied to explain a series of experimental results that are related to thermal cycling of amorphous dielectric films, such as plasma-enhanced physical vapor deposited (PECVD) silicon oxide (SiOx) films, including stress hysteresis generation and reduction and coefficient of thermal-expansion changes. In particular, the thickness effect was examined; PECVD SiOx films with a thickness varying from 1 to 40 m were studied, as certain demanding applications in Microelectromechanical Systems (MEMS) require such thick films serving as heat/electrical insulation layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 854: Symposium U – Stability of Thin Films and Nanostructures , 2004 , U8.1
Copyright
Copyright © Materials Research Society 2005

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References

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