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Thin Film Metal Oxide Semiconductors Deposited on Polymeric Substrates

Published online by Cambridge University Press:  17 March 2011

Elvira Fortunato ,
Patrícia Nunes ,
António Marques ,
Daniel Costa ,
Hugo ÁGuas ,
Isabel Ferreira ,
Maria E. V. Costa  and
Rodrigo Martins
Elvira Fortunato
Affiliation:
Department of Materials Science/CENIMAT, Faculty of Sciences and Technology, New University of Lisbon and CEMOP-UNINOVA, 2825-114 Caparica, Portugal
Patrícia Nunes
Affiliation:
Department of Materials Science/CENIMAT, Faculty of Sciences and Technology, New University of Lisbon and CEMOP-UNINOVA, 2825-114 Caparica, Portugal
António Marques
Affiliation:
Department of Materials Science/CENIMAT, Faculty of Sciences and Technology, New University of Lisbon and CEMOP-UNINOVA, 2825-114 Caparica, Portugal
Daniel Costa
Affiliation:
Department of Materials Science/CENIMAT, Faculty of Sciences and Technology, New University of Lisbon and CEMOP-UNINOVA, 2825-114 Caparica, Portugal
Hugo ÁGuas
Affiliation:
Department of Materials Science/CENIMAT, Faculty of Sciences and Technology, New University of Lisbon and CEMOP-UNINOVA, 2825-114 Caparica, Portugal
Isabel Ferreira
Affiliation:
Department of Materials Science/CENIMAT, Faculty of Sciences and Technology, New University of Lisbon and CEMOP-UNINOVA, 2825-114 Caparica, Portugal
Maria E. V. Costa
Affiliation:
Department of Ceramics and Glass Engineering/UIMC, University of Aveiro, 3810-193 Aveiro, Portugal
Rodrigo Martins
Affiliation:
Department of Materials Science/CENIMAT, Faculty of Sciences and Technology, New University of Lisbon and CEMOP-UNINOVA, 2825-114 Caparica, Portugal
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Abstract

Highly textured transparent conducting ZnO:Al thin films have been prepared by r.f. magnetron sputtering. The films were deposited on polyester (Mylar type D, 100 μm thickness) and glass substrates at room temperature. Surface stylus profiling, X-ray diffraction, scanning electron microscopy, transmission electron microscope and Hall effect measurements as a function of temperature, using the van der Pauw technique have characterized the films. The samples are polycrystalline with a hexagonal wurtzite structure and a strong crystallographic c-axis orientation (002) perpendicular to the substrate surface (columnar structure). The ZnO:Al thin films with a resistivity as low as 3.6×10−2 ωcm have been obtained, as deposited.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 685: Symposium D – Advanced Materials and Devices for Large-Area Electronics , 2001 , D5.12.1
Copyright
Copyright © Materials Research Society 2001

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