Hostname: page-component-78c5997874-g7gxr Total loading time: 0 Render date: 2024-11-10T09:40:10.166Z Has data issue: false hasContentIssue false
  • English
  • Français

Thin Na0.5K0.5NbO3 Films for Varactor Applications

Published online by Cambridge University Press:  10 February 2011

C.-R. Cho ,
J.-H. Koh ,
A. Grishin ,
S. Abadei ,
P. Petrov  and
S. Gevorgian
C.-R. Cho
Affiliation:
Condensed Matter Physics, Department of Physics, Royal Institute of Technology, Stockholm, S-100 44, Sweden
J.-H. Koh
Affiliation:
Department of Microelectronics, Chalmers University of Technology, S-412 96, Gdteborg, Sweden
A. Grishin
Affiliation:
Condensed Matter Physics, Department of Physics, Royal Institute of Technology, Stockholm, S-100 44, Sweden
S. Abadei
Affiliation:
Department of Microelectronics, Chalmers University of Technology, S-412 96, Gdteborg, Sweden
P. Petrov
Affiliation:
Department of Microelectronics, Chalmers University of Technology, S-412 96, Gdteborg, Sweden
S. Gevorgian
Affiliation:
Department of Microelectronics, Chalmers University of Technology, S-412 96, Gdteborg, Sweden
Get access

Abstract

Single phase Na0.5K0.5NbO3 (NKN) thin films have been pulsed laser deposited on SiO2/Si(C-01) wafers and LaAlO3(001) and MgO(001) single crystals. Radio frequency (up to 1 MHz) and microwave (up to 50 GHz) dielectric spectroscopy studies have been carried out to characterize thin NKN films for electrically tunable microwave device applications. Films on single crystal oxide substrates showed tunabilities as high as 30-40 % at 40 V bias and dissipation factor of 0.01-0.02 at 1 MHz. The films on Si substrates showed low dielectric losses of < 0.01, and low leakage currents. Dielectric properties of ferroelectric films on Si substrates at low frequencies are greatly influenced by the depletion capacitance and the resistance inserted by semiconductor substrate. Microwave frequency measurements for NKN film on Si wafers yield more than 10 % tunability at 50 GHz and loss tan σ <0.1 at 10 GHz.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 623: Symposium U – Materials Science of Novel Oxide-Based Electronics , 2000 , 109
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Wang, X., Helmersson, U., Olafsson, S., Rudner, S., Wernlund, L., Gevorgian, S., Appl. Phys. Lett. 74, 927 (1998).Google Scholar
[2] Cho, C.-R., Koh, J.-H., Grishin, A., Abadei, S., Gevorgian, S., Appl. Phys. Lett. 76, 1971 (2000).Google Scholar
[3] Cho, C.-R., Grishin, A., J. Appl. Phys., 87, 4439 (2000).Google Scholar
[4] Glazer, A. M., Acta Crystallogr. Sect. A: Cryst Phys., Diffr., Theor. Gen. Crystallogr. A31, 756 (1975).Google Scholar
[5] Cho, C.-R., Grishin, A., MRS Spring 2000, San Francisco, April 24-28, 2000.Google Scholar
[6] Shirane, G., Newnham, R., Pepinsky, R., Phys. Rev. 96, 581 (1954).Google Scholar
[7] Cho, C.-R., Khartsev, S. I., Grishin, A., Lindbäck, T., Mat. Res. Soc. Symp. Proc., 574, 249 (1999).Google Scholar
[8] Zhou, C., Newns, D. M., J. Appl. Phys. 82, 3080 (1997).Google Scholar
[9] Dalberth, M. J., Stanber, R. E., Price, J. C., Rogers, C. T., Galt, D., Appl. Phys. Lett. 72, 507 (1998).Google Scholar
[10] Koren, G., Gupta, A., Baseman, R. J., Lutwyche, M. I., Laibowitz, R. B., Appl. Phys. Lett. 55, 2450 (1989).Google Scholar
[11] Watanabe, Y., Phys. Rev. B. 59, 11257 (1999).Google Scholar
[12] Fujisawa, H., Shimizu, M., Horiuchi, T., Shiosaki, T., Matsushige, K., Appl. Phys. Lett. 71, 416 (1997).Google Scholar
[13] Egerton, L., Dillon, D. M., J. Am. Ceram. Soc. 42, 438 (1959).Google Scholar
[14] Cho, C.-R., Grishin, A., 12th International Symposium on Integrated Ferroelectrics (ISIF 2000), Aachen, March 12-15, 2000.Google Scholar
[15] Du, X., Zheng, J., Belegucu, U., Uchino, K., Appl. Phys. Lett. 72, 2421 (1998).Google Scholar
[16] Gardeniers, J. G. E., Rittersma, Z. M., Burger, G. J., J. Appl. Phys. 83, 7844 (1998).Google Scholar
[17] Du, H., Johnson, D. W. Jr, Zhu, W., Graebner, J. E., Kammlott, G. W., Jin, S., Rogers, J., Willett, R., Fleming, R. M., J. Appl. Phys. 86, 2220 (1999).Google Scholar
[18] Dubois, M.-A., Muralt, P., Appl. Phys. Lett. 74, 3032 (1999).Google Scholar
[19] Wu, M., Shin, W. -C., Jpn. J. Appl. Phys. 36, 2192 (1997).Google Scholar