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Thin PZT Film Pressure Microsensor

Published online by Cambridge University Press:  21 March 2011

S.I. Khartsev ,
M.A. Grishin ,
Kenth Nilsson  and
A.M. Grishin
S.I. Khartsev
Affiliation:
KTH, Department of Microelectronics and Information Technology, S-164 40 Kista, SWEDEN
M.A. Grishin
Affiliation:
KTH, Department of Microelectronics and Information Technology, S-164 40 Kista, SWEDEN
Kenth Nilsson
Affiliation:
Qenico AB, S-184 85 Åkersberga, SWEDEN.
A.M. Grishin
Affiliation:
KTH, Department of Microelectronics and Information Technology, S-164 40 Kista, SWEDEN
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Abstract

We report on a ferroelectric film pressure sensor fabricated on the top of 4 mm long and 1.4 mm in diameter Pt80Ir20 (PtIr) rod-shaped tip. It consists of a PZT(0.5μm)/LSMO(0.1μm) film heterostructure, deposited by pulsed laser ablation of stoichiometric ceramic targets PbZr0.52Ti0.48O3 and La0.67Sr0.33MnO3, and a circular, ø= 1.2 mm, Au electrode on the top of the PZT film. The Au/PZT/LSMO/PtIr thin-film capacitor demonstrates good ferroelectric properties: dielectric constant of 762 and loss tanσ =0.008 @ 5 kHz, induced polarization as high as 32 μC/cm2 at electric field of 250 kV/cm. Piezoelectric test, performed in a hydrostatic pressure chamber, exhibits the piezoelectric constant to be as high as 67 pC/N. This is 20% higher than 56 pC/N shown by a polarized bulk PZT sensor fabricated from the ceramics used as the target in the pulsed laser deposition process. Such an increase of the piezoelectric constant we attribute to the preferential (001) orientation of the PZT film grown on the PtIr bulk substrate. The resolution of the thin PZT film pressure microsensor was found to be about 1 mbar.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 666: Symposium F – Transport and Microstructural Phenomena , 2001 , F8.12
Copyright
Copyright © Materials Research Society 2001

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References

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