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Three Dimensional Characterization of Interfaces in Semiconductors by Scanning Electron Microscopy

Published online by Cambridge University Press:  25 February 2011

David C. Joy ,
D. M. Maher  and
R C Farrow
David C. Joy
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
D. M. Maher
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
R C Farrow
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
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Abstract

In many semiconductor materials problems, structural characterizations must be achieved in both the lateral and vertical dimensions. Although a combination of cross-sectional and planar transmission electron microscopy can provide this information, the sample preparation time is demanding and only relatively small volumes of material are examined. We describe here an alternative approach in which the charge collection (‘CCM’) imaging mode of the scanning electron microscope (SEM) is used. It is shown that, by varying the incident electron beam energy, electricallly active defects at different positions beneath the entrance surface of the material can be imaged and their depth estimated.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 69: Symposium D – Materials Characterization , 1986 , 171
Copyright
Copyright © Materials Research Society 1986

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References

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