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Time Resolved Measurements of Interface Dynamics During Pulsed Laser Melting Observed by Transient Conductance

Published online by Cambridge University Press:  15 February 2011

Michael O. Thompson  and
G. J. Galvin
Michael O. Thompson
Affiliation:
Department of Material Science, Cornell University, Ithaca, NY 14853
G. J. Galvin
Affiliation:
Department of Material Science, Cornell University, Ithaca, NY 14853
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Abstract

The transient conductance technique has been used in a detailed study of the liquid-solid interface dynamics during pulsed laser melting of Si and silicon-on-sapphire. Average melt and regrowth velocities, as well as the maximum melt depth, can be obtained with the technique. The measurements are found to agree well with a computer simulation based on a thermal model of the melt and subsequent solidification. The melt-in velocity has been observed to exceed 200 m/sec. Under 2.5 ns UV irradiation, the critical velocity for amorphization of <100> Si has been measured at 15 m/sec.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 13 , 1982 , 57
Copyright
Copyright © Materials Research Society 1983

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References

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