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Time-Dependent Forming Characteristics in Pt/NiO/Pt Stack Structures for Resistive Random Access Memory

Published online by Cambridge University Press:  25 May 2012

Yusuke Nishi ,
Tatsuya Iwata ,
Daisuke Horie  and
Tsunenobu Kimoto
Yusuke Nishi
Affiliation:
Department of Electronic Science and Engineering, Kyoto University, Kyotodaigaku-katsura, Nishikyo, Kyoto, 615-8510, Japan
Tatsuya Iwata
Affiliation:
Department of Electronic Science and Engineering, Kyoto University, Kyotodaigaku-katsura, Nishikyo, Kyoto, 615-8510, Japan
Daisuke Horie
Affiliation:
Department of Electronic Science and Engineering, Kyoto University, Kyotodaigaku-katsura, Nishikyo, Kyoto, 615-8510, Japan
Tsunenobu Kimoto
Affiliation:
Department of Electronic Science and Engineering, Kyoto University, Kyotodaigaku-katsura, Nishikyo, Kyoto, 615-8510, Japan
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Abstract

Constant voltage Time-Dependent Forming (TDF) measurements in as-deposited Pt/NiO/Pt stack structures have been conducted. From TDF characteristics, formation of conductive filaments at forming process by applying voltage follows weakest link theory. Furthermore, weakest spots are almost randomly distributed in NiO thin films according to Poisson statistics, each of which can contribute conductive paths locally generated. A “percolating layer” in which the conductive filaments percolate by applying voltage may exist in the NiO thin film. The thickness of the layer is much smaller than that of NiO thin films.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1430: Symposium E – Materials and Physics of Emerging Nonvolatile Memories , 2012 , mrss12-1430-e06-02
Copyright
Copyright © Materials Research Society 2012

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References

REFERENCES

1. Gibbons, J. F. and Beadle, W. E., Solid State Electron. 7, 785 (1964).Google Scholar
2. Baek, I. G., Lee, M. S., Seo, S., Lee, M. J., Seo, D. H., Suh, D.-S., Park, J. C., Park, S. O., Kim, H. S., Yoo, I. K., Chung, U-In, and Moon, J. T., Tech. Digests of the 2004 IEEE Int. Electron Devices Meet., pp. 587–590.Google Scholar
3. Argall, F., Solid State Electron. 11, 535 (1968).Google Scholar
4. Choi, B. J., Jeong, D. S., Kim, S. K., Rohde, C., Choi, S., Oh, J. H., Kim, H. J., Hwang, C. S., Szot, K., Waser, R., Reichenberg, B., and Tiedke, S., J. Appl. Phys. 98, 033715 (2005).Google Scholar
5. Shima, H., Takano, F., Akinaga, H., Tamai, Y., Inoue, I. H., and Takagi, H., Appl. Phys. Lett. 91, 012901 (2007).Google Scholar
6. Degraeve, R., Ogier, J. L., Bellens, R., Roussel, P. J., Groeseneken, G., and Maes, H. E., IEEE Trans. Electron Devices 45, 472 (1998).Google Scholar
7. Nishi, Y., Iwata, T., and Kimoto, T., Jpn. J. Appl. Phys. 50, 015802 (2011).Google Scholar
8. Buh, G-H., Hwang, I., and Park, B. H., Appl. Phys. Lett. 95, 142101 (2009).Google Scholar
9. Sune, J., IEEE Electron. Device Lett. 22, 296 (2001).Google Scholar