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Time-Resolved Photoluminescence of GaN / Ga0.93Al0 .07N Quantum Wells

Published online by Cambridge University Press:  10 February 2011

P. Lefebvre ,
J. Allègre ,
B. Gil ,
A. Kavokine ,
H. Mathieu ,
W. Kim ,
A. Salvador ,
A. Botchkarev  and
H. Morkoç
P. Lefebvre
Affiliation:
Groupe d'Etude des Semiconducteurs - CNRS - Université Montpellier II. Case courrier 074. 34095 Montpellier CEDEX 5. France. lefebvre.lefebvre@ges.univ-montp2.fr
J. Allègre
Affiliation:
Groupe d'Etude des Semiconducteurs - CNRS - Université Montpellier II. Case courrier 074. 34095 Montpellier CEDEX 5. France. lefebvre.lefebvre@ges.univ-montp2.fr
B. Gil
Affiliation:
Groupe d'Etude des Semiconducteurs - CNRS - Université Montpellier II. Case courrier 074. 34095 Montpellier CEDEX 5. France. lefebvre.lefebvre@ges.univ-montp2.fr
A. Kavokine
Affiliation:
Groupe d'Etude des Semiconducteurs - CNRS - Université Montpellier II. Case courrier 074. 34095 Montpellier CEDEX 5. France. lefebvre.lefebvre@ges.univ-montp2.fr
H. Mathieu
Affiliation:
Groupe d'Etude des Semiconducteurs - CNRS - Université Montpellier II. Case courrier 074. 34095 Montpellier CEDEX 5. France. lefebvre.lefebvre@ges.univ-montp2.fr
W. Kim
Affiliation:
Coordinated Science Laboratory, University of Illinois at Urbana-Champaign. Urbana, IL 61801
A. Salvador
Affiliation:
Coordinated Science Laboratory, University of Illinois at Urbana-Champaign. Urbana, IL 61801
A. Botchkarev
Affiliation:
Virginia Commonwealth University. 921 West Franklin Street. P.O. Box 843072. Richmond, Virginia 23284-3072. U.S.A.
H. Morkoç
Affiliation:
Virginia Commonwealth University. 921 West Franklin Street. P.O. Box 843072. Richmond, Virginia 23284-3072. U.S.A.
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Abstract

The recombination dynamics of excitons in GaN / Ga0.93Al0.07N multiple quantum wells is studied versus lattice temperature. The average decay time of photoluminescence measured at 8K is of ∼330 ps, with a substantial variation of times within the emission line. This is interpreted in terms of carrier localization due to alloy disorder and to well width and depth variations. The radiative lifetime τr of excitons in the wells is found to increase linearly with temperature, with ∂τr / ∂T = 20.5 ± 0.7 ps.K−1. The radiative lifetime of free excitons in the low-temperature limit is deduced to be 2.4 ps, consistent with a longitudinal-transverse splitting ћωLT in GaN of 0.6 meV, in excellent agreement with recent estimations. The ratio of the lifetimes of localized and free excitons is found coherent with the picture of electrons and holes independently localized on short-range defects, instead of excitons localized as a whole on long-range potential fluctuations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 607
Copyright
Copyright © Materials Research Society 1998

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References

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