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Tin as a Diffusion Barrier Between CoSi2 or PtSi and Aluminum

Published online by Cambridge University Press:  15 February 2011

R. J. Schutz
R. J. Schutz*
Affiliation:
Bell Laboratories, Murray Hill, NJ 07974, (U.S.A.)
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Abstract

The effectiveness of a thin (360Å) layer of reactively sputtered TiN as a diffusion barrier between aluminum and two silicides (PtSi and CoSi2) was evaluated. The chemical composition, structural phases and electrical properties of silicide/Al and silicide/TiN/Al contacts to n-type silicon were studied by Rutherford backscattering spectroscopy, glancing angle X-ray diffraction and Schottky barrier height measurements respectively. The results show that TiN is an effective barrier in these two systems up to at least 450°C, the typical temperature at which aluminum contacts are sintered.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 18: Symposium C – Interfaces and Contacts , 1982 , 89
Copyright
Copyright © Materials Research Society 1982

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References

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