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Title: Inkjet-printed rectifying metal-insulator-semiconductor (MIS) diodes for flexible electronic applications

Published online by Cambridge University Press:  24 April 2014

Kalyan Yoti Mitra
Affiliation:
Chemnitz University of Technology, Digital Printing and Imaging Technology, Chemnitz, Germany
Carme Martínez-Domingo
Affiliation:
Universitat Autónoma de Barcelona, CAIAC, Bellaterra, Spain
Enrico Sowade
Affiliation:
Chemnitz University of Technology, Digital Printing and Imaging Technology, Chemnitz, Germany
Eloi Ramon
Affiliation:
Universitat Autónoma de Barcelona, CAIAC, Bellaterra, Spain
Henrique Leonel Gomes
Affiliation:
Universidade do Algarve, Institute of Telecommunications, Faro, Portugal
Reinhard. R. Baumann
Affiliation:
Chemnitz University of Technology, Digital Printing and Imaging Technology, Chemnitz, Germany Fraunhofer Institute for Electronic Nano Systems (ENAS), Department Printed Functionalities, Chemnitz, Germany
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Abstract

Inkjet printing is a well-accepted deposition technology for functional materials in the area of printed electronics. It allows the precise deposition of patterned functional layers on both, rigid and flexible substrates. Furthermore, inkjet printing is considered as up-scalable technology towards industrial applications. Many electronic devices manufactured with inkjet printing have been reported in the recent years. Some of the evident examples are capacitors, resistors, organic thin film transistors and rectifying Schottky diodes. [1, 2, 3] In this paper we report on the manufacturing of an inkjet-printed metal-insulator-semiconductor (MIS) diode on flexible plastic substrate. The structure is comprised of an insulating and a polymeric semiconducting layer sandwiched between two silver electrodes. The current vs. voltage characteristics are rectifying with rectification ratio up to 100 at |4 V|. Furthermore, they can carry high current densities (up to mA/cm2) and have a low capacitance which makes them attractive for high frequency rectifying circuits. They are also an ideal candidate to replace conventional Schottky diodes for which the fabrication remains a challenge. This is because inkjet printing of Schottky diodes require additional processing steps such as intense pulsed light sintering (IPL sintering) [4] or post-treatments at high temperatures. The deposition of two different metal layers using inkjet printing e.g. Cu or Al with Ag is possible. However, the mentioned post treatment technologies might be incompatible with the already existing layer stack– e.g. it could degrade the organic semiconductor or can damage insulator which in this case is present in the MIS diode architecture.

Type
Articles
Copyright
Copyright © Materials Research Society 2014 

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References

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