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Transient Annealing of Ion Implanted Gallium Arsenide

Published online by Cambridge University Press:  15 February 2011

J.S. Williams
J.S. Williams*
Affiliation:
Jmrc, Faculty Of Engineering, Royal Melbourne Institute Of Technology, Melbourne 3000, Australia.
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Abstract

This paper provides a brief overview of the application of transient annealing to the removal of ion implantation damage and dopant activation in GaAs. It is shown that both the liquid phase and solid phase annealing processes are more complex in GaAs than those observed in Si. Particular attention is given to observations of damage removal, surface dissociation, dopant redistribution, solubility and the electrical properties of GaAs. The various annealing mechanisms are discussed and areas in need of further investigation are identified.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 13 , 1982 , 621
Copyright
Copyright © Materials Research Society 1983

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References

REFERENCES

1.Laser-Solid Interactions and Laser Processing - 1978, Ferris, S.D., Leamy, H.J. and Poate, J.M., eds, AlP Conf. Proc. 50.(New York, Amer. Inst. Phys., 1979).Google Scholar
2.Laser and Electron Beam Processing of Materials, White, C.W and Peercy, P.S., eds. (New York, Academic, 1980).Google Scholar
3.Laser and Electron Beam-Solid Interactions and Materials Processing, Gibbons, J.F., Hess, L.D. and Sigmon, T.W., eds.(North-Holland, New York, 1981).Google Scholar
4.Laser and Electron Beam Interactions with Solids, Appleton, B.R. and Celler, G.K., eds. (North-Holland, New York, 1982).Google Scholar
5.Eisen, F.H., in Ref. 2. p. 309.Google Scholar
6.Williams, J.S. and Harrison, H.B., in Ref.3, p. 209.Google Scholar
7.Anderson, C.L., in Ref. 4, p. 653.Google Scholar
8.Williams, J.S., Ch.11 in: Laser Processing of Semiconductors, Poate, J.M. and Mayer, J.W. eds. (Academic Press, New York 1982), p. 383.Google Scholar
9.Campisano, S.U., Foti, G., Rinini, E., Eisen, F.H., Tseng, W.F., Nicolet, M.A. and Tandon, J.L., J. Appl. Phys. 51, 295 (1980).Google Scholar
10.Venkatesan, T.N.C., Auston, D.H., Golovchenko, J.A. and Surko, C.M., in Ref.1, p. 629.Google Scholar
11.Lowndes, D.H., Cleland, J.W., Christie, W.N. H. and Eby, R.E., in Ref.3.p.223Google Scholar
12.Wood, R.F., Lowndes, D.H. and Christie, W.H. in Ref.3, p. 231.Google Scholar
13.Fletcher, J., Narayan, J. and Lowndes, D.H., in Defects in Semiconductors Narayan, J. and Tan, T.Y., eds. (North Holland, New York, 1981),p. 421.Google Scholar
14.Cullis, A.G., these proceedings.Google Scholar
15.Williams, J.S. and Austin, M.W., Nucl. Instr. Meth. 168, 307 (1980)Google Scholar
16.Barnes, R.A., Leamy, H.J., Poate, J.M., Ferris, S.D., Williams, J.S. and Celler, G.K., Appl. Phys. Lett. 33, 965 (1978).Google Scholar
17.Gamo, K., Yuba, Y, Ornaby, A.H., Murakami, K., Namba, S. and Kawasaki, Y., in Ref.2,p. 322.Google Scholar
18.Badawi, M.H., Sealy, B.J., Kular, S.S., Barrett, N.J., Emerson, N., Stephens, G., Booker, G.R. and Hockley, M. in Ref. 2, p. 354.Google Scholar
19.Inada, T., Tokunaga, K. and Taka, S., Appl. Phys. Lett. 35, 546 (1979).Google Scholar
20.Rose, A., Pollock, J.A., Scott, M.D., Williams, J.S., Adams, F.M. and Lawson, E.M., these proceedings.Google Scholar
21.Tandon, J.L., Golecki, I., Nicolet, M.A., Sadana, D.K., Washburn, J., Appl.Phys. Lett. 35, 867 (1979).Google Scholar
22.Barnes, P.A., Leamy, H.J., Poate, J.M., Ferris, S.D., Williams, J.S. and Celler, G.K., in Ref. 1., p. 647.Google Scholar
23.Liu, S.G., Wu, C.P. and Magee, C.W., in Ref.2, p. 341.Google Scholar
24.Sealy, B.J., Badawi, M.H., Kular, S.S. and Stephens, K.G., in Ref.1., p. 610.Google Scholar
25.Inada, T., Kato, S., Maeda, Y., Tokunaka, K., J. Appl. Phys. 50, 6000 (1979).Google Scholar
26.Harrison, H.B. and Williams, J.S., in Ref.2, p. 481.Google Scholar
27.Pianetta, P.A., Stolte, C.A. and Hanson, J.L., Appl. Phys. Lett. 36.697(1980).Google Scholar
28.Pianetta, P.A., Amano, J., Woolhouse, G. and Stolte, C.A., in Ref.3,p.239.Google Scholar
29.Eisen, F.H., in Ion Implantation and Beam Processing, Williams, J.S. and Poate, J.M., eds. (Academic Press, Sydney, 1983).Google Scholar
30.Emerson, N.G. and Sealy, B.J., Electron. Lett, 16, 512 (1980).Google Scholar
31.Mooney, P., Baurgoin, J.C. and Icole, J., in Ref.3, p. 255.Google Scholar
32.Anderson, C.L., Dunlap, H.J., Hess, L.D., Olson, G.L. and Vaidyanathan, V.Y., in Ref. 2, p. 334.Google Scholar
33.Davies, D.E., Lorenzo, J.P., Kennedy, E.F. and Ryan, T.G., in GaAs and Related Compounds, InSt. Phys. Con.f Ser, 63, 389 (1982).Google Scholar
34.Takai, M., Ono, S., Ootsuka, Y., Gamo, K. and Namba, S., in Ion Implantation Equipment and Techniques, Ryssel, H. et al. , eds (Springer-Verlag, Munich (1982).Google Scholar
35.Fan, J.C.C., Chapman, R.L., Donnelly, J.P., Turner, G.W. and Bozler, C.O., in Ref.3,p.261.Google Scholar
36.Golecki, I., Nicolet, M.A., Maenpaa, M., Tandon, J.L., Kirkpatrick, C., D.K., and Washburn, J., in Ref.2,p. 347.Google Scholar
37.Lowndes, D.H. and Feldman, B.J., in Ref.4, p. 689.Google Scholar
38.Williams, J.S., Austin, M.W. and Harrison, H.B. in Thin Film Interfaces and Interactions, Baglin, J.E.E. and Poate, J.M., eds (ECS, Princeton 1980)p. 187.Google Scholar
39.Fan, J.C.C., Chapman, R.L., Donnelly, J.P., Turner, G.W., CO. Bozler, Appl. Phys. Lett. 34, 780 (1979).Google Scholar
40.Olson, G.L., Anderson, C.L., Dunlap, H.L., Ness, L.D., Mc Farlene, R.A. and Vaidyanathan, K.V., in Laser and Electron Beam Processing of Electronic Materials, Anderson, C.L., Celler, G.K. and Rozgonyi, G.A. eds. (ECS, Princton 1980).p. 467.Google Scholar
41.Nissim, Y.I. and Gibbons, J.F., in Ref.3, p. 275.Google Scholar
42.Sealy, B.J. and Surridge, R.K., IBMM - 78 Conf. Proc. Gyulai, J. et al. , eds. (Budapest, 1979), p. 487.Google Scholar
43.Sealy, B.J., Microelectronics Journal 13, 21 (1982).Google Scholar
44.Chapman, R.L., Fan, J.C.C., Donnelly, J.P., Tsaur, B-Y, Appl. Phys. Lett. 40, 805 (1982).Google Scholar
45.Arai, M., Nishiyama, K. and Watanabe, N., Japan J. Appl. Phys. 20, L124 (1981).Google Scholar
46.Davies, D.E., Mc Nally, P.J., Ryan, T.G., Soda, K.J. and Comer, J.H., to be published.Google Scholar
47.Harrison, H.B., Adams, F.M., Cornish, B., Johnson, S.T., Short, K.T. and Williams, J.S., these proceedings.Google Scholar
48.Shah, N.J., Ahmed, H., Leigh, P.A., Appl. Phys. Lett. 39, 322 (1981).Google Scholar
49.Gamo, K., Inada, T., Mayer, J.W., Eisen, F.H. and Rhodes, C. G., Radiation Effects 33, 85 (1977).Google Scholar
50.Grimaldi, M.G., Paine, B.M., Nicolet, M.-A. and Sadana, D.K., J. Appl.Phys. 52, 4038 (1981).Google Scholar
51.Nissim, Y.I., Chrstel, L.A., Sigmon, T.W., Gibbons, J.F., Magee, T.J. and Ormond, R., J. Appl. Phys. 52, (1981).Google Scholar
52.Williams, J.S., Adams, F.M. and Rossiter, K.G., Thin Solid Films 93, 139 (1982).Google Scholar
53.Kular, S.S., Sealy, B.J., Stephens, K.G., Sadana, D.K. and Booker, G.R.Solid State Electron. 23, 831 (1980).Google Scholar
54.Narayan, J., J. Appl. Phys. (in press).Google Scholar
55.Eisne, F.H., in Ion Beam Modification of Materials. Guylai, J., Lohner, T. and Paztor, E. eds. (Hung. Acad. Sci. Budapest 1978) p. 147.Google Scholar
56.Donnelly, J.P., Inst. Phys. Conf. Ser. 33, 167 (1977).Google Scholar
57.Adams, F.M., Williams, J.S. and Harrison, H.B., to be published.Google Scholar
58.Sadana, D.K., private communicationGoogle Scholar
59.Speriosu, V.S., Paine, B.M., Nicolet, M.A. and Glass, H.L., Appl. Phys.Lett. 40, 604 (1982).Google Scholar
60.Donnelly, J.P., in Ion Beam Modification of Materials-1980. Benenson, R.E. et al. eds. (North Holland Amsterdam 1981) p.553.Google Scholar
61.Bhattacharya, R.S., Rai, A.K., Yeo, Y.K., Pronko, P.P. and Park, Y.S., to be published.Google Scholar
62.Shahid, M.A., Moffatt, S., Barrett, N.J., Sealy, B.J., Puttick, K.E., B.J. S.T. (to be published).Google Scholar