Hostname: page-component-745bb68f8f-hvd4g Total loading time: 0 Render date: 2025-01-29T23:44:15.459Z Has data issue: false hasContentIssue false
  • English
  • Français

Transient Photoconductivity of a-Si:H at Low Temperatures Induced by Bandgap Light

Published online by Cambridge University Press:  10 February 2011

S. Heck ,
P. Stradins  and
H. Fritzsche
S. Heck
Affiliation:
James Franck Institute, University of Chicago, Chicago, IL 60637
P. Stradins
Affiliation:
James Franck Institute, University of Chicago, Chicago, IL 60637
H. Fritzsche
Affiliation:
James Franck Institute, University of Chicago, Chicago, IL 60637
Get access

Abstract

The rise and decay of the photoconductivity σp of intrinsic and strongly p-type hydrogenated amorphous silicon (a-Si:H) samples was studied as a function of photocarrier generation rate G between 4.2K and 300K. In intrinsic samples the temperature regime T<60K of energy-loss hopping is clearly distinguishable from T>80K where thermal re-excitation of photocarriers is possible. For the p-type sample the temperature dividing the two regimes is near 170K. In intrinsic samples the rise of σp is faster when residual photocarriers exist from previous light exposures than when the samples are in the electronic dark equilibrium. This indicates that geminate recombination decreases with increasing photocarrier concentration. In the p-type sample we observe an up to 20 percent overshoot in the rise of σp before σp settles down to its steady state value. This overshoot increases with G. We interpret the overshoot as an interplay of two recombination channels with different time scales.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 420: Symposium A – Amorphous Silicon Technology-1996 , 1996 , 753
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Hoheisel, M., Carius, R. and Fuhs, W., J. Non-Cryst. Solids 63, 313 (1984).Google Scholar
2. Hoheisel, M., Ph.D. Thesis, Phillips-University, Marburg, Germany (1984).Google Scholar
3. Shklovskii, B. I., Fritzsche, H. and Baranovskii, S. D., J. Non-Cryst. Solids 114 325 (1989).Google Scholar
4. Hoheisel, M. and Fuhs, W., Philos. Mag. B57, 411 (1988).Google Scholar
5. Nesládek, M., Triska, A. and Adriaenssens, G. J., J. Non-Cryst. Solids 141, 155 (1992).Google Scholar
6. Fritzsche, H., Heck, S. and Stradins, P., J. Non-Cryst. Solids (1996) in press.Google Scholar
7. Street, R. A. and Biegelsen, D. K., Solid State Comm. 44, 501 (1982).Google Scholar
8. Bube, R. H. ”Photoconductivity”, Pergamon Press, 1962.Google Scholar