Hostname: page-component-6bf8c574d5-b4m5d Total loading time: 0 Render date: 2025-02-22T17:03:48.389Z Has data issue: false hasContentIssue false
  • English
  • Français

Transient Photocurrent Spectroscopy of Trap Levels in Ultra-Thin SiO2 Films

Published online by Cambridge University Press:  15 February 2011

Y. Miura  and
S. Fujieda
Y. Miura
Affiliation:
Microelectronics Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba, Ibaraki 305, Japan
S. Fujieda
Affiliation:
Microelectronics Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba, Ibaraki 305, Japan
Get access

Abstract

Stress-induced trap levels near Si/SiO2 interfaces for MOS diodes with 10 imi-thick oxides are investigated by measuring the transient photocurrent, which depends on the incident photon energy. The electron trap levels are filled by tunneling injection, and the electrons are depopulated by monochromatic light irradiation. The transient photocurrent, which is measured as an external circuit current, decays exponentially with time. Based on a proposed detrapping model, the optical cross section is estimated to be about 1×10−17 cm2 for hv=2−3 eV. The obtained photo-accessible trap density has a broad distribution at around hv=2.5 eV.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 428: Symposium L – Materials Reliability in Microelectronics VI , 1996 , 343
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Lai, S. K. and Young, D. R., J. Appl. Phys. 52, 6231 (1981).Google Scholar
[2] Moazzami, R. and Hu, C., IEDM Tech. Dig. p. 13 9 (1992).Google Scholar
[3] Lundström, I., Christensson, S., and Svensson, C., Phys. Stat. Sol. (a), 1, 395 (1970).Google Scholar
[4] DiMaria, D. J., Cartier, E., and Arnold, D., J. Appl. Phys. 73, 3367 (1993).Google Scholar
[5] Rofan, R. and Hu, C., IEEE Electron Device Lett. 12, 632 (1991).Google Scholar
[6] Patel, N. K. and Toriumi, A., Appl. Phys. Lett. 64, 1809 (1994).Google Scholar
[7] Thomas, J. H. III, J. Appl. Phys. 44, 811 (1973).Google Scholar
[8] DiMaria, D. J. and Feigl, F. J., Phys. Rev. B, 11, 5023 (1975).Google Scholar
[9] Kapoor, V. J., Feigl, F. J., and Butler, S. R., J. Appl. Phys. 48, 739 (1977).Google Scholar
[10] DiStefano, T. H., J. Vac. Sci. Technol. 13, 856 (1976).Google Scholar
[11] Yasuda, N., Patel, N. K., and Toriumi, A., Extended Abstracts of International Conference on Solid State Devices and Materials (Makuhari), 1993, p. 847.Google Scholar