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TRANSMISSION ELECTRON MICROSCOPY STUDY OF INTERFACE REGION OF ALN / 6H-SIC

Published online by Cambridge University Press:  01 February 2011

Jharna Chaudhuri ,
Luke Owuor Nyakiti ,
Peng Lu ,
James H Edgar  and
Peng Li
Jharna Chaudhuri
Affiliation:
jharna.chaudhuri@ttu.edu, Texas Tech University, Mechanical Engineering, 7th Street & Boston Avenue, Lubbock, TX, 79409-1021, United States, (806) 742 3563 ext, (806) 742 3540
Luke Owuor Nyakiti
Affiliation:
luke.nyakiti@ttu.edu, Texas Tech University, Department of Mechanical Engineering, 7th Street & Boston, Lubbock, TX, 79409-1021, United States
Peng Lu
Affiliation:
plu@ncsu.edu, Kansas State University, Department of Chemical Engineering, Manhattan, KS, 66506, United States
James H Edgar
Affiliation:
edgarjh@ksu.edu, Kansas State University, Department of Chemical Engineering, Manhattan, KS, 66506, United States
Peng Li
Affiliation:
pengli@unm.edu, University of New Mexico, Department of Earth and Planetary Science, Albuquerque, NM, 87131, United States
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Abstract

Transmission electron microscopy (TEM) study was performed to investigate the interface region of AlN/6H-SiC. Thick AlN layers were grown on a 3.5° off-axis 6H-SiC substrate at a temperature of 1790 °C for 100 hours by sublimation-recondensation method. The energy dispersive x-ray spectroscopy (EDXS) analysis indicated considerable amount of aluminum and nitrogen present in the substrate and Si and C present in AlN. Lattice images of cross-sectional TEM samples show a faceted interface with step growth.

Keywords

transmission electron microscopy (TEM)nitridedislocations
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1040: Symposium Q – Nitrides and Related Bulk Materials , 2007 , 1040-Q10-05
Copyright
Copyright © Materials Research Society 2008

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