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Transmission Fourier Transform Infra-red Spectroscopy Investigation of Structure Property Relationships in Low-k SiOxCy:H Dielectric Thin Films

Published online by Cambridge University Press:  03 January 2013

Sean W. King ,
Ebony Mays ,
Canay Ege ,
Niklas Hellgren ,
Jessica Xu ,
Han Li  and
Boyan Boyanov
Sean W. King
Affiliation:
Logic Technology Development, Intel Corporation, Hillsboro, OR 97124, U.S.A.
Ebony Mays
Affiliation:
Logic Technology Development, Intel Corporation, Hillsboro, OR 97124, U.S.A.
Canay Ege
Affiliation:
Logic Technology Development, Intel Corporation, Hillsboro, OR 97124, U.S.A.
Niklas Hellgren
Affiliation:
Logic Technology Development, Intel Corporation, Hillsboro, OR 97124, U.S.A.
Jessica Xu
Affiliation:
Logic Technology Development, Intel Corporation, Hillsboro, OR 97124, U.S.A.
Han Li
Affiliation:
Logic Technology Development, Intel Corporation, Hillsboro, OR 97124, U.S.A.
Boyan Boyanov
Affiliation:
Logic Technology Development, Intel Corporation, Hillsboro, OR 97124, U.S.A.
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Abstract

In order to understand the structure property relationships for inorganic low dielectric constant (i.e. low-k) materials, transmission Fourier Transform-Infrared (FTIR) spectroscopy has been utilized to study the local bonding structure in various plasma enhanced chemically vapor deposited low-k materials in the SiOxCy:H phase diagram. The FTIR measurements were combined with additional mechanical, electrical, and optical property measurements to elucidate the structure property relationships for these materials. The combined measurements show that increased incorporation of terminal methyl bonding results in a decrease in network bonding that manifests itself in a reduction in mass density, dielectric constant, refractive index, Young’s modulus and many other important material properties.

Keywords

dielectric propertiesplasma-enhanced CVD (PECVD) (deposition)infrared (IR) spectroscopy
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1520: Symposium NN – Structure-Property Relations in Amorphous Solids , 2013 , mrsf12-1520-nn11-04
Copyright
Copyright © Materials Research Society 2012

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References

REFERENCES

Bohr, M., Proc. IEEE IEDM 10, (1995).Google Scholar
Maex, K., Baklanov, M., Shamiryan, D., Iacopi, F., Brongersma, S., and Yanovitskaya, Z., J. Appl. Phys. 93, 8793 (2003).10.1063/1.1567460CrossRefGoogle Scholar
Andideh, E., Lerner, M., Palmrose, G., El-Mansy, S., Scherban, T., Xu, G., and Baine, J., J. Vac. Sci. Technol. B 22, 196 (2004).10.1116/1.1640401CrossRefGoogle Scholar
Jousseaume, V., Gourhant, O., Gonon, P., Zenasni, A., and Favennec, L., J. Electrochem. Soc. 159, G59 (2012).Google Scholar
King, S., Bielefeld, J., French, M., and Lanford, W., J. Non-Cryst. Sol. 357, 3602 (2011).10.1016/j.jnoncrysol.2011.07.004CrossRefGoogle Scholar
King, S., French, M., Bielefeld, J., and Lanford, W., J. Non-Cryst. Sol. 357, 2970 (2011).10.1016/j.jnoncrysol.2011.04.001CrossRefGoogle Scholar
Volinsky, A, Vella, J., and Gerberich, W., Thin Solid Films 429, 201 (2003).10.1016/S0040-6090(03)00406-1CrossRefGoogle Scholar
King, S. and Antonelli, G., Thin Solid Films 515, 7232 (2007).10.1016/j.tsf.2007.02.106CrossRefGoogle Scholar
King, S. and Gradner, J., Microelectron. Rel. 49, 712 (2009).10.1016/j.microrel.2009.04.006CrossRefGoogle Scholar
Lin, Y., Xiang, Y., Tsui, T., and Vlassak, J., Acta Mater. 56, 4932 (2008).10.1016/j.actamat.2008.06.007CrossRefGoogle Scholar
Stan, G., King, S., and Cook, R., J. Mater. Res. 24, 2960 (2009).10.1557/jmr.2009.0357CrossRefGoogle Scholar
King, S. and Bielefeld, J., ECS Transactions 33, 185 (2010).10.1149/1.3484122CrossRefGoogle Scholar
Matsuda, Y., King, S., Bielefeld, J., Xu, J., and Dauskardt, R., Acta Mater. 60, 682 (2012).10.1016/j.actamat.2011.10.014CrossRefGoogle Scholar
Hondongwa, D., Olasov, L., Daly, B., King, S., and Bielefeld, J., Thin Solid Films 519, 7895 (2011).10.1016/j.tsf.2011.05.014CrossRefGoogle Scholar
Zhou, W., Bailey, S., Sooryamkumar, R., King, S., Xu, G., Mays, E., Ege, C., and Bielefeld, J., J. Appl. Phys. 110, 43520 (2011).10.1063/1.3624583CrossRefGoogle Scholar
The International Technology Roadmap for Semiconductors, Semiconductor Industry Association, San Jose, CA, 2011. See also: (http://www.itrs.net/).Google Scholar
Yoo, H., Balakrishnan, S., Bielefeld, J., Harmes, M., Hiramatsu, H., King, S., Kobrinsky, M., Krist, B., Reese, P., RamachandraRao, V., Singh, K., Suri, S., and Ward, C., Proc. IEEE Inter. Interconnect Conf. 5510708 (2010).Google Scholar
Frot, T., Volksen, W., Purushothaman, S., Bruce, R., Magbitang, T., Miller, D., Deline, V., and Dubois, G., Adv. Funct. Mater. 23, 2828 (2011)10.1002/adma.201100569CrossRefGoogle Scholar
Gates, S., Neumayer, D., Sherwood, M., Grill, A., Wang, X., and Sankarapandian, M., J. Appl. Phys. 101, 94103 (2007).10.1063/1.2718278CrossRefGoogle Scholar
King, S., French, M., Jaehnig, M., Kuhn, M., Boyanov, B., and French, B., J. Vac. Sci. Technol. B 29, 51207 (2011).10.1116/1.3633691CrossRefGoogle Scholar
King, S., French, M., Jaehnig, M., Kuhn, M., and French, B., Appl. Phys. Lett. 99, 202903 (2011).10.1063/1.3660248CrossRefGoogle Scholar
King, S., Chu, R., Xu, G., and Huening, J., Thin Solid Films 518, 4898 (2010).10.1016/j.tsf.2010.03.031CrossRefGoogle Scholar
Jousseaume, V., Zenasni, A., Favennec, L., Gerbaud, G., Bardet, M., Simon, J., and Humbert, A., J. Electrochem. Soc. 154, G103 (2007).10.1149/1.2667980CrossRefGoogle Scholar
Liu, X., Gill, S., Tang, F., King, S., and Nemanich, R., J. Vac. Sci. Technol. B 30, 31212 (2012).10.1116/1.4705732CrossRefGoogle Scholar
King, S., J. Vac. Sci. Technol. A 29, 41501 (2011).10.1116/1.3584790CrossRefGoogle Scholar
Stan, G., King, S., and Cook, R., Nanotechnology 23, 215703 (2012).10.1088/0957-4484/23/21/215703CrossRefGoogle Scholar
King, S., Smith, L., Barnak, J., Ku, J., Christman, J., Benjamin, M., Bremser, M., Nemanich, R., and Davis, R., MRS Symp. Proc. 395, 739 (1996).10.1557/PROC-395-739CrossRefGoogle Scholar
King, S., Benjamin, M., Nemanich, R., Davis, R., and Lambrecht, W., MRS Symp. Proc. 396, 375 (1996).Google Scholar
King, S., Jacob, D., Vanleuven, D., Colvin, B., Kelly, J., French, M., Bielefeld, J., Dutta, D., Liu, M., and Gidley, D., ECS J. Solid State Sci. Technol. 1, 6 (2012).Google Scholar
Baklanov, M., Mogilnikov, K., Polovinkin, V., and Dultsev, N., J. Vac. Sci. Technol. B 18, 1385 (2000).10.1116/1.591390CrossRefGoogle Scholar
King, S. and Milosevic, M., J. Appl. Phys. 111, 73109 (2012).10.1063/1.3700178CrossRefGoogle Scholar
Milosevic, M. and King, S., J. Appl. Phys. 112, 93514 (2012).10.1063/1.4764346CrossRefGoogle Scholar
Binggeli, N., Troullier, N., Martins, J., and Chelikowsky, J., Phys. Rev. B 44, 4771 (1991).10.1103/PhysRevB.44.4771CrossRefGoogle Scholar
Olego, D., Cardona, M., and Vogl, P., Phys. Rev. B 25, 3878 (1982).10.1103/PhysRevB.25.3878CrossRefGoogle Scholar