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Transparent Conductive Tin Doped Indium Oxide Thin Films with Silver Additive

Published online by Cambridge University Press:  21 March 2011

Annette Hultåker ,
Jun Lu ,
Eva Olsson ,
Gunnar A. Niklasson  and
Claes-Göran Granqvist
Annette Hultåker*
Affiliation:
Department of Materials Science, The Ångström Laboratory, Uppsala University, P O Box 534, SE-751 21 Uppsala, Sweden
Jun Lu
Affiliation:
Department of Materials Science, The Ångström Laboratory, Uppsala University, P O Box 534, SE-751 21 Uppsala, Sweden
Eva Olsson
Affiliation:
Department of Materials Science, The Ångström Laboratory, Uppsala University, P O Box 534, SE-751 21 Uppsala, Sweden
Gunnar A. Niklasson
Affiliation:
Department of Materials Science, The Ångström Laboratory, Uppsala University, P O Box 534, SE-751 21 Uppsala, Sweden
Claes-Göran Granqvist
Affiliation:
Department of Materials Science, The Ångström Laboratory, Uppsala University, P O Box 534, SE-751 21 Uppsala, Sweden
*
1Corresponding author: Phone: +46 18 471 31 32, Fax: +46 18 500 131, E-mail: Annette.Hultaker@Angstrom.uu.se
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Abstract

Thin films of intermixed layers of In2O3:Sn (denoted ITO) and silver were made by reactive dc magnetron sputtering. The silver to indium atomic ratio was 0 ≤ x ≥ 0.09 Films with x = 0.01 showed increased luminous transmittance Tlum after annealing at 100 or 200°C, whereas x > 0.01 yielded lowered Tlum. The optical properties could be reconciled with the Maxwell-Garnett effective medium theory assuming that a well-defined portion of the silver was occluded as spheroidal particles. Films with x ≤ 0.06 had enhanced electrical conductivity after annealing at 200 or 300°C. Transmission electron microscopy displayed columnar features whose character depended on x.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 666: Symposium F – Transport and Microstructural Phenomena , 2001 , F1.9
Copyright
Copyright © Materials Research Society 2001

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References

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