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Transparent p-n Heterojunction Thin Film Diodes

Published online by Cambridge University Press:  21 March 2011

M. K. Jayaraj ,
A. D. Draeseke ,
J. Tate ,
R. L. Hoffman  and
J. F. Wager
M. K. Jayaraj
Affiliation:
Department of Physics, Oregon State University, Corvallis, OR 97331, USA
A. D. Draeseke
Affiliation:
Department of Physics, Oregon State University, Corvallis, OR 97331, USA
J. Tate
Affiliation:
Department of Physics, Oregon State University, Corvallis, OR 97331, USA
R. L. Hoffman
Affiliation:
Department of Electrical and Computer Engineering, Oregon State University, Corvallis, OR 97331, USA.
J. F. Wager
Affiliation:
Department of Electrical and Computer Engineering, Oregon State University, Corvallis, OR 97331, USA.
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Abstract

Transparent p-n heterojunction diodes are fabricated using p-type CuYO2:Ca and n-type ZnO:Al thin films on a glass substrate coated with indium-tin oxide (ITO). The contact between the n-ZnO:Al / p-CuYO2:Ca heterojunction is found to be rectifying, while the ITO / ZnO:Al contact is ohmic. The typical ratio of forward to reverse current is 15 in the range -3 to 3V. The diode current-voltage characteristics are dominated by the flow of space charge limited current, which is ascribed to the existence of an insulating ZnO interfacial layer. The diode structure has a total thickness of 0.85 μm and an optical transmission of 40%-50% in the visible region.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 666: Symposium F – Transport and Microstructural Phenomena , 2001 , F4.1
Copyright
Copyright © Materials Research Society 2001

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References

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